X-On Electronics has gained recognition as a prominent supplier of BC327-025G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC327-025G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BC327-025G ON Semiconductor

BC327-025G electronic component of ON Semiconductor
BC327-025G ON Semiconductor
BC327-025G Bipolar Transistors - BJT
BC327-025G  Semiconductors

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See Product Specifications
Part No. BC327-025G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 800mA 50V PNP
Datasheet: BC327-025G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 0.0606 ea
Line Total: USD 0.18 
Availability - 0
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 16 May to Thu. 22 May
MOQ : 1
Multiples : 1
1 : USD 0.1371
25 : USD 0.1186
100 : USD 0.0746
500 : USD 0.0648
1000 : USD 0.0563
2500 : USD 0.0452
10000 : USD 0.0399

0
Ship by Fri. 16 May to Thu. 22 May
MOQ : 1
Multiples : 1
1 : USD 0.0371
10 : USD 0.037
100 : USD 0.0351
2000 : USD 0.0313
10000 : USD 0.0301

0
Ship by Fri. 16 May to Thu. 22 May
MOQ : 2671
Multiples : 2671
2671 : USD 0.1574

0
Ship by Fri. 23 May to Wed. 28 May
MOQ : 3
Multiples : 1
3 : USD 0.0606

0
Ship by Fri. 16 May to Thu. 22 May
MOQ : 447
Multiples : 1
447 : USD 0.0774
500 : USD 0.0648
1000 : USD 0.0563
2500 : USD 0.0452
10000 : USD 0.0399

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the BC327-025G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC327-025G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC327, BC327-16, BC327-25, BC327-40 Amplifier Transistors PNP Silicon BC327, BC327 16, BC32725, BC32740 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mA, I = 0) 45 C B Collector Emitter Breakdown Voltage V Vdc (BR)CES (I = 100 A, I = 0) 50 C E Emitter Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 A, I = 0) E C Collector Cutoff Current I nAdc CBO (V = 30 V, I = 0) 100 CB E Collector Cutoff Current I nAdc CES (V = 45 V, V = 0) 100 CE BE Emitter Cutoff Current I 100 nAdc EBO (V = 4.0 V, I = 0) EB C ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC327 100 630 C CE BC327 16 100 250 BC327 25 160 400 BC327 40 250 630 (I = 300 mA, V = 1.0 V) 40 C CE BaseEmitter On Voltage V 1.2 Vdc BE(on) (I = 300 mA, V = 1.0 V) C CE Collector Emitter Saturation Voltage V 0.7 Vdc CE(sat) (I = 500 mA, I = 50 mA) C B SMALLSIGNAL CHARACTERISTICS Output Capacitance C 11 pF ob (V = 10 V, I = 0, f = 1.0 MHz) CB E Current Gain Bandwidth Product f 260 MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) C CE 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 (t) = (t) JC JC = 100C/W MAX 0.05 JC 0.1 P (pk) (t) = r(t) 0.02 JA JA 0.07 = 375C/W MAX SINGLE PULSE JA 0.05 t 1 D CURVES APPLY FOR 0.01 POWER 0.03 t SINGLE PULSE 2 PULSE TRAIN SHOWN DUTY CYCLE, D = t /t 0.02 1 2 READ TIME AT t 1 T T = P (t) J(pk) C (pk) JC 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (SECONDS) Figure 1. Thermal Response

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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