BC327 PNP Epitaxial Silicon Transistor
October 2014
BC327
PNP Epitaxial Silicon Transistor
Features
Switching and Amplifier Applications
Suitable for AF-Driver Stages and Low-Power Output Stages
Complement to BC337 / BC338
TO-92
1
1. Collector 2. Base 3. Emitter
Ordering Information
Part Number Top Mark Package Packing Method
BC327BU BC327 TO-92 3L Bulk
BC32716BU BC32716 TO-92 3L Bulk
BC32716TA BC32716 TO-92 3L Ammo
BC32725BU BC32725 TO-92 3L Bulk
BC32725TA BC32725 TO-92 3L Ammo
BC32740BU BC32740 TO-92 3L Bulk
BC32740TA BC32740 TO-92 3L Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
V Collector-Emitter Voltage -50 V
CES
V Collector-Emitter Voltage -45 V
CEO
V Emitter-Base Voltage -5 V
EBO
I Collector Current (DC) -800 mA
C
T Junction Temperature 150 C
J
T Storage Temperature -55 to 150 C
STG
2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC327 Rev. 1.1.0 BC327 PNP Epitaxial Silicon Transistor
(1)
Thermal Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Value Unit
Power Dissipation 625 mW
P
D
Derate Above 25C5.0mW/C
R Thermal Resistance, Junction-to-Ambient 200 C/W
JA
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T = 25C unless otherwise noted.
A
Symbol Parameter Conditions Min. Typ. Max. Unit
BV Collector-Emitter Breakdown Voltage I = -10 mA, I = 0 -45 V
CEO C B
BV Collector-Emitter Breakdown Voltage I = -0.1 mA, V = 0 -50 V
CES C BE
BV Emitter-Base Breakdown Voltage I = -10 A, I = 0 -5 V
EBO E C
I Collector Cut-Off Current V = -45 V, I = 0 -2 -100 nA
CES CE B
h V = -1 V, I = -100 mA 100 630
FE1 CE C
DC Current Gain
h V = -1 V, I = -300 mA 60
FE2 CE C
V (sat) Collector-Emitter Saturation Voltage I = -500 mA, I = -50 mA -0.7 V
CE C B
V (on) Base-Emitter On Voltage V = -1 V, I = -300 mA -1.2 V
BE CE C
V = -5 V, I = -10 mA,
CE C
f Current Gain Bandwidth Product 100 MHz
T
f = 20 MHz
V = -10 V, I = 0,
CB E
C Output Capacitance 12 pF
ob
f = 1 MHz
h Classification
FE
Classification 16 25 40
h 100 ~ 250 160 ~ 400 250 ~ 630
FE1
h 60 ~ 100 ~ 170 ~
FE2
2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC327 Rev. 1.1.0 2