BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon BC337, BC337 25, BC33740 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V 45 Vdc (BR)CEO (I = 10 mA, I = 0) C B Collector Emitter Breakdown Voltage V 50 Vdc (BR)CES (I = 100 A, I = 0) C E Emitter Base Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 A, I = 0) E C Collector Cutoff Current I 100 nAdc CBO (V = 30 V, I = 0) CB E Collector Cutoff Current I 100 nAdc CES (V = 45 V, V = 0) CE BE Emitter Cutoff Current I 100 nAdc EBO (V = 4.0 V, I = 0) EB C ON CHARACTERISTICS DC Current Gain h FE (I = 100 mA, V = 1.0 V) BC337 100 630 C CE BC33725 160 400 BC33740 250 630 (I = 300 mA, V = 1.0 V) C CE 60 BaseEmitter On Voltage V 1.2 Vdc BE(on) (I = 300 mA, V = 1.0 V) C CE Collector Emitter Saturation Voltage V 0.7 Vdc CE(sat) (I = 500 mA, I = 50 mA) C B SMALLSIGNAL CHARACTERISTICS Output Capacitance C 15 pF ob (V = 10 V, I = 0, f = 1.0 MHz) CB E Current Gain Bandwidth Product f 210 MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 (t) = (t) JC JC = 100C/W MAX 0.05 JC 0.1 P (pk) (t) = r(t) 0.02 JA JA 0.07 SINGLE PULSE = 375C/W MAX JA 0.05 t 1 D CURVES APPLY FOR 0.01 POWER 0.03 t SINGLE PULSE 2 PULSE TRAIN SHOWN 0.02 DUTY CYCLE, D = t /t 1 2 READ TIME AT t 1 T T = P (t) J(pk) C (pk) JC 0.01 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t, TIME (SECONDS) Figure 1. Thermal Response