BC817-40W 45 V, 0.5 A, General Purpose NPN Transistor ON Semiconductors BC81740W is a General Purpose NPN Transistor that is housed in the SC70/SOT323 package. Features www.onsemi.com NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 COLLECTOR Qualified and PPAP Capable 3 This Device is PbFree, Halogen Free/BFR Free and is RoHS Compliant 1 BASE MAXIMUM RATINGS (T = 25C) A Rating Symbol Value Unit 2 EMITTER Collector Emitter Voltage V 45 V CEO Collector Base Voltage V 50 V CBO Emitter Base Voltage V 5.0 V EBO Collector Current Continuous I 500 mAdc C THERMAL CHARACTERISTICS SC70 Characteristic Symbol Max Unit CASE 419 Total Device Dissipation (Note 1) P 460 mW D STYLE 3 Thermal Resistance, R 272 C/W JA JunctiontoAmbient (Note 1) MARKING DIAGRAM Junction and Storage Temperature T , T 55 to +150 C J stg Range Stresses exceeding those listed in the Maximum Ratings table may damage the CE M device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. FR4 Board, 1 oz. Cu, 100 mm 1 CE = Specific Device Code M = Date Code = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping BC81740WT1G SC70 3000 / Tape & (PbFree) Reel NSVBC81740WT1G SC70 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2016 Rev. 2 BC81740W/DBC81740W ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 45 V (VR)CEO (I = 10 mA) C CollectorEmitter Breakdown Voltage V 50 V (VR)CES (V = 0 V, I = 10 A) EB C EmitterBase Breakdown Voltage V 5.0 V (VR)EBO (I = 1.0 A) E Collector Cutoff Current I CBO (V = 20 V) 100 nA CB (V = 20 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain (Note 2) h FE (I = 100 mA, V = 1.0 V) 250 600 C CE (I = 500 mA, V = 1.0 V) 40 C CE CollectorEmitter Saturation Voltage (Note 2) V 0.7 V CE(sat) (I = 500 mA, I = 50 mA) C B BaseEmitter On Voltage (Note 2) V 1.2 V BE(on) (I = 500 mA, V = 1.0 V) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) C CE Output Capacitance C 10 pF obo (V = 10 V, f = 1.0 MHz) CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Condition: Pulse Width = 300 sec, Duty Cycle 2% www.onsemi.com 2