BC847CDXV6T1G ON Semiconductor

BC847CDXV6T1G electronic component of ON Semiconductor
BC847CDXV6T1G ON Semiconductor
BC847CDXV6T1G Bipolar Transistors - BJT
BC847CDXV6T1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC847CDXV6T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC847CDXV6T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC847CDXV6T1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 100mA 50V Dual NPN
Datasheet: BC847CDXV6T1G Datasheet (PDF)
Price (USD)
2027: USD 0.1283 ea
Line Total: USD 260.06 
Availability : 7730
  
Ship by Fri. 08 Aug to Thu. 14 Aug
QtyUnit Price
2027$ 0.1283
2650$ 0.0982
3572$ 0.0728
4082$ 0.0637
4976$ 0.0523
8000$ 0.046
24000$ 0.0344

Availability 266008
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3375
10$ 0.2087
100$ 0.1248
500$ 0.0847
1000$ 0.0682
2000$ 0.0605
4000$ 0.0506
8000$ 0.044
24000$ 0.0396


Availability 597
Ship by Wed. 06 Aug to Fri. 08 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.35
10$ 0.2338
50$ 0.154
100$ 0.1274
259$ 0.0728


Availability 7760
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 8000
Multiples : 4000
QtyUnit Price
8000$ 0.0535
8000$ 0.0491
24000$ 0.0374


Availability 7730
Ship by Fri. 08 Aug to Thu. 14 Aug
MOQ : 2027
Multiples : 1
QtyUnit Price
2027$ 0.1283
2650$ 0.0982
3572$ 0.0728
4082$ 0.0637
4976$ 0.0523
8000$ 0.046
24000$ 0.0344

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BC847CDXV6T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC847CDXV6T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G Dual General Purpose BC847CDXV6T1G, SBC847CDXV6T1G, BC847CDXV6T5G, BC848CDXV6T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V V (BR)CEO (I = 10 mA) BC847CDXV6T1, SBC847CDXV6 45 C BC848CDXV6T1 30 Collector Emitter Breakdown Voltage V V (BR)CES 50 (I = 10 A, V = 0) BC847CDXV6T1, SBC847CDXV6 C EB BC848CDXV6T1 30 Collector Base Breakdown Voltage V V (BR)CBO (I = 10 A) BC847CDXV6T1, SBC847CDXV6 50 C BC848CDXV6T1 30 Emitter Base Breakdown Voltage V V (BR)EBO 6.0 (I = 1.0 A) BC847CDXV6T1, SBC847CDXV6 E BC848CDXV6T1 5.0 Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE 270 (I = 10 A, V = 5.0 V) C CE (I = 2.0 mA, V = 5.0 V) 420 520 800 C CE Collector Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.25 V C B CE(sat) Collector Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.6 C B Base Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) Base Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter Voltage (I = 2.0 mA, V = 5.0 V) V 580 660 700 mV C CE BE(on) Base Emitter Voltage (I = 10 mA, V = 5.0 V) 770 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance (V = 10 V, f = 1.0 MHz) C 1.5 pF CB obo Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k ,f = 1.0 kHz, BW = 200 Hz) 10 C CE S ORDERING INFORMATION Device Specific Marking Package Shipping BC847CDXV6T1G 4000 Units / Tape & Reel SOT563 SBC847CDXV6T1G 1G (Pb Free) BC847CDXV6T5G 8000 Units / Tape & Reel BC848CDXV6T1G SOT563 4000 Units / Tape & Reel 1L (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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