BCW65ALT1G ON Semiconductor

BCW65ALT1G electronic component of ON Semiconductor
BCW65ALT1G ON Semiconductor
BCW65ALT1G Bipolar Transistors - BJT
BCW65ALT1G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BCW65ALT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BCW65ALT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BCW65ALT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 100mA 60V NPN
Datasheet: BCW65ALT1G Datasheet (PDF)
Price (USD)
1: USD 0.2375 ea
Line Total: USD 0.24 
Availability : 15396
  
Ship by Wed. 15 Oct to Fri. 17 Oct
QtyUnit Price
1$ 0.2375
10$ 0.1487
100$ 0.0876
500$ 0.0621
1000$ 0.0517
3000$ 0.0418
6000$ 0.0407
9000$ 0.0352
24000$ 0.0297

Availability 2900
Ship by Fri. 17 Oct to Thu. 23 Oct
MOQ : 10
Multiples : 10
QtyUnit Price
10$ 0.097
100$ 0.0774
300$ 0.0508
3000$ 0.0409
6000$ 0.037
9000$ 0.0351


Availability 15396
Ship by Wed. 15 Oct to Fri. 17 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.2375
10$ 0.1487
100$ 0.0876
500$ 0.0621
1000$ 0.0517
3000$ 0.0418
6000$ 0.0407
9000$ 0.0352
24000$ 0.0297


Availability 164
Ship by Wed. 15 Oct to Fri. 17 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.224
10$ 0.1344
100$ 0.0864
428$ 0.0447
1176$ 0.0423
9000$ 0.041
24000$ 0.0406

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BCW65ALT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BCW65ALT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BCW65ALT1G is a 300 V N-Channel MOSFET produced by ON Semiconductor. It is an Advanced level device, suitable for high-performance switching and amplifier applications. The device has an RDS(on) of 6.5 mOhm and a max drain source voltage of 300 V. It has high switching speeds, low drain-source on-resistance, and excellent avalanche capabilities. The device is housed in a SOT-223 surface mount package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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