BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, mediumpower silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. BD135G, BD137G, BD139G ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max UnIt CollectorEmitter Sustaining Voltage* BV * Vdc CEO (I = 0.03 Adc, I = 0) C B BD135G 45 BD137G 60 BD139G 80 Collector Cutoff Current I Adc CBO (V = 30 Vdc, I = 0) 0.1 CB E (V = 30 Vdc, I = 0, T = 125 C) 10 CB E C Emitter Cutoff Current I 10 Adc EBO (V = 5.0 Vdc, I = 0) BE C DC Current Gain h * FE (I = 0.005 A, V = 2 V) 25 C CE (I = 0.15 A, V = 2 V) 40 250 C CE (I = 0.5 A V = 2 V) 25 C CE CollectorEmitter Saturation Voltage* V * Vdc CE(sat) (I = 0.5 Adc, I = 0.05 Adc) 0.5 C B BaseEmitter On Voltage* V * Vdc BE(on) (I = 0.5 Adc, V = 2.0 Vdc) 1 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. TYPICAL CHARACTERISTICS 1000 0.3 V = 2 V 150C I /I = 10 CE C B 150C 0.2 25C 55C 55C 25C 100 0.1 10 0 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A) C C Figure 1. DC Current Gain Figure 2. CollectorEmitter Saturation Voltage