X-On Electronics has gained recognition as a prominent supplier of BSV52LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BSV52LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

BSV52LT1G ON Semiconductor

BSV52LT1G electronic component of ON Semiconductor
BSV52LT1G ON Semiconductor
BSV52LT1G Bipolar Transistors - BJT
BSV52LT1G  Semiconductors

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See Product Specifications
Part No. BSV52LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 12 V 100 mA 400MHz 225 mW Surface Mount SOT-23-3 (TO-236)
Datasheet: BSV52LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0832 ea
Line Total: USD 249.6 
Availability - 2910
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ : 3000
Multiples : 3000
3000 : USD 0.0832
6000 : USD 0.0679
12000 : USD 0.0598
27000 : USD 0.0544
51000 : USD 0.0522
102000 : USD 0.0509
150000 : USD 0.0491
252000 : USD 0.0489

5810
Ship by Fri. 27 Jun to Tue. 01 Jul
MOQ : 1
Multiples : 1
1 : USD 0.392
10 : USD 0.2478
100 : USD 0.154
241 : USD 0.0784
662 : USD 0.0742

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
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We are delighted to provide the BSV52LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BSV52LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The BSV52LT1G is an N-channel enhancement-mode MOSFET developed by ON Semiconductor. It has a maximum drain current of 0.1 A, a drain-source breakdown voltage of 60 V, and a maximum drain-source resistance of 0.17 O. This single-channel device is designed to provide fast switching in low voltage applications. Its features include low TO-92 package, high avalanche energy, and low intrinsic capacitance. It is capable of operating in temperatures between -55°C and 150°C.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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