BUL45G NPN Silicon Power Transistor HighVoltageSWITCHMODESeries Designed for use in electronic ballast (light ballast) and in BUL45G ELECTRICALCHARACTERISTICS (T =25 C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFFCHARACTERISTICS Collector--Emitter Sustaining Voltage (I =100 mA, L =25 mH) V 400 -- -- Vdc C CEO(sus) Collector Cutoff Current (V =Rated V ,I =0) I -- -- 100 mAdc CE CEO B CEO Collector Cutoff Current (V =Rated V ,V =0) I -- -- 10 mAdc CE CES EB CES (T =125 C) -- -- 100 C Emitter Cutoff Current (V =9.0Vdc,I =0) I -- -- 100 mAdc EB C EBO ONCHARACTERISTICS Base--EmitterSaturation Voltage V Vdc BE(sat) (I =1.0Adc,I =0.2Adc) -- 0.84 1.2 C B (I =2.0Adc,I =0.4Adc) -- 0.89 1.25 C B Collector--Emitter Saturation Voltage (I =1.0Adc,I =0.2Adc) V -- 0.175 0.25 Vdc C B CE(sat) (T =125 C) -- 0.150 -- C Collector--Emitter Saturation Voltage (I =2.0Adc,I =0.4Adc) V -- 0.25 0.4 Vdc C B CE(sat) (T =125 C) -- 0.275 -- C DC Current Gain (I =0.3Adc,V =5.0Vdc) h 14 -- 34 -- C CE FE (T =125 C) -- 32 -- C =2.0Adc,V =1.0Vdc) (I 7.0 14 -- C CE (T =125 C) 5.0 12 -- C (I =10mAdc,V =5.0Vdc) 10 22 -- C CE DYNAMICCHARACTERISTICS Current Gain Bandwidth (I =0.5Adc,V =10 Vdc, f =1.0 MHz) f -- 12 MHz C CE T Output Capacitance (V =10Vdc,I =0,f=1.0MHz) C -- 50 75 pF CB E ob Input Capacitance (V =8.0Vdc) C -- 920 1200 pF EB ib -- 1.75 -- 1.0 ms (I =1.0Adc C (T =125 C) -- 4.4 -- C I =100 mAdc B1 -- 0.5 -- V =300 V) Dynamic Saturation Voltage: CC 3.0 ms (T =125 C) -- 1.0 -- C V Determined 1.0 ms and 3.0 ms CE Vdc respectively after rising I (Dyn sat) B1 -- 1.85 -- 1.0 ms reaches 90% of finalI (I =2.0Adc B1 C (T =125 C) -- 6.0 -- C (see Figure 18) I =400 mAdc B1 -- 0.5 -- V =300 V) CC 3.0 ms (T =125 C) -- 1.0 -- C SWITCHINGCHARACTERISTICS:ResistiveLoad Turn--On Time (I =2.0Adc,I =I =0.4Adc t -- 75 110 ns C B1 B2 on Pulse Width =20 ms, (T =125 C) -- 120 -- C Turn--Off Time Duty Cycle <20% V =300 V t -- 2.8 3.5 ms CC off (T =125 C) -- 3.5 -- C SWITCHINGCHARACTERISTICS:InductiveLoad (V =15Vdc,L =200 mH, V =300 Vdc) CC C clamp FallTime (I =2.0Adc,I =0.4Adc t 70 -- 170 ns C B1 fi I =0.4Adc) (T =125 C) -- 200 -- B2 C Storage Time t 2.6 -- 3.8 ms si (T =125 C) -- 4.2 -- C CrossoverTime t -- 230 350 ns c -- 400 -- (T =125 C) C FallTime (I =1.0Adc,I =100 mAdc t -- 110 150 ns C B1 fi I =0.5Adc) (T =125 C) -- 100 -- B2 C Storage Time t -- 1.1 1.7 ms si -- 1.5 -- (T =125 C) C CrossoverTime t -- 170 250 ns c (T =125 C) -- 170 -- C FallTime (I =2.0Adc,I =250 mAdc t -- 80 120 ns C B1 fi I =2.0Adc) (T =125 C) B2 C Storage Time (T =125 C) t -- 0.6 0.9 ms C si CrossoverTime (T =125 C) t -- 175 300 ns C c