BUV22 Switch-mode Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. BUV22 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS (Note 1) CollectorEmitter Sustaining Voltage V 250 Vdc CEO(sus) (I = 200 mA, I = 0, L = 25 mH) C B Collector Cutoff Current at Reverse Bias I mAdc CEX (V = 300 V, V = 1.5 V) CE BE 3.0 (V = 300 V, V = 1.5 V, T = 125 C) CE BE C 12.0 CollectorEmitter Cutoff Current I 3.0 mAdc CEO (V = 200 V) CE EmitterBase Reverse Voltage V 7 V EBO (I = 50 mA) E EmitterCutoff Current I 1.0 mAdc EBO (V = 5 V) EB SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased I Adc S/b (V = 20 V, t = 1 s) CE 12 (V = 140 V, t = 1 s) CE 0.15 ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 10 A, V = 4 V) C CE 20 60 (I = 20 A, V = 4 V) C CE 10 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 A, I = 1 A) C B 1.0 (I = 20 A, I = 2.5 A) C B 1.5 BaseEmitter Saturation Voltage V 1.5 Vdc BE(sat) (I = 40 A, I = 4 A) C B DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product f 8.0 MHz T (V = 15 V, I = 2 A, f = 4 MHz) CE C SWITCHING CHARACTERISTICS (Resistive Load) Turnon Time t 0.8 s on (I = 20 A, I = I = 2.5 A, C B1 B2 Storage Time t 2.0 s V = 100 V, R = 5 ) CC C Fall Time t 0.35 f 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 1.0 0.8 0.6 0.4 0.2 0 40 80 120 160 200 T , TEMPERATURE (C) C Figure 1. Power Derating