CPH3109-TL-E ON Semiconductor

CPH3109-TL-E electronic component of ON Semiconductor
CPH3109-TL-E ON Semiconductor
CPH3109-TL-E Bipolar Transistors - BJT
CPH3109-TL-E  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of CPH3109-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CPH3109-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. CPH3109-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT BIP PNP 3A 30V
Datasheet: CPH3109-TL-E Datasheet (PDF)
Price (USD)
1588: USD 0.2863 ea
Line Total: USD 454.64 
Availability : 5820
  
Ship by Fri. 03 Oct to Thu. 09 Oct
QtyUnit Price
1588$ 0.2863
10000$ 0.2551
100000$ 0.2138

Availability 2449
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 718
Multiples : 1
QtyUnit Price
718$ 0.3512


Availability 5820
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1588
Multiples : 1
QtyUnit Price
1588$ 0.2863
10000$ 0.2551
100000$ 0.2138


Availability 2449
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 718
Multiples : 1
QtyUnit Price
718$ 0.3512


Availability 5820
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1588
Multiples : 1
QtyUnit Price
1588$ 0.2863
10000$ 0.2551
100000$ 0.2138


Availability 32010
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1588
Multiples : 1
QtyUnit Price
1588$ 0.2863
10000$ 0.2551
100000$ 0.2138


Availability 17460
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1588
Multiples : 1
QtyUnit Price
1588$ 0.2863
10000$ 0.2551
100000$ 0.2138

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CPH3109-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPH3109-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN6078C CPH3109/CPH3209 Bipolar Transistor --30mA --40mA 2mA CPH3109 / CPH3209 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)30V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)500mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)500mA (380)450 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (25)20 pF CB V (sat)1 I =(--)1.5A, I =(--)30mA (--155)120 (--230)180 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =(--)1.5A, I =(--)75mA (--)105 (--)155 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)1.5A, I =(--)30mA (--)0.83 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--30)40 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)30 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)5 V (BR)EBO E C Turn-On Time t (50)30 ns on Storage Time t See speci ed Test Circuit. (270)300 ns stg Fall Time t (25)15 ns f Switching Time Test Circuit I I B1 B1 PW=20 s PW=20 s DC 1% I DC 1% I B2 B2 OUTPUT OUTPUT INPUT INPUT R R B B V 24 V 24 R R + + + + 50 50 100 F 470 F 100 F 470 F V =5V V = --12V V = --5V V =12V BE CC BE CC --20I =20I = I = --500mA 20I = --20I = I =500mA B1 B2 C B1 B2 C CPH3109 CPH3209 Ordering Information Device Package Shipping memo CPH3109-TL-E CPH3 3,000pcs./reel Pb Free CPH3209-TL-E CPH3 3,000pcs./reel Pb Free I -- V I -- V C CE C CE --2.0 2.0 CPH3109 --1.6 1.6 --1.2 1.2 0.8 --0.8 --0.4 0.4 CPH3209 I =0 I =0 B B 0 0 0 --200 --400 --600 --800 --1000 0 200 400 600 800 1000 Collector-to-Emitter Voltage, V -- mV IT08069 Collector-to-Emitter Voltage, V -- mV IT08070 CE CE No.6078-2/7 --4mA --2mA --6mA 4mA --8mA --10mA 6mA 8mA 10mA --20mA 20mA 30mA 40mA --50mA 50mA Collector Current, I -- A C Collector Current, I -- A C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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