CPH3116-TL-E ON Semiconductor

CPH3116-TL-E electronic component of ON Semiconductor
CPH3116-TL-E ON Semiconductor
CPH3116-TL-E Bipolar Transistors - BJT
CPH3116-TL-E  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of CPH3116-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CPH3116-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. CPH3116-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 50 V 1 A 420MHz 900 mW Surface Mount 3-CPH
Datasheet: CPH3116-TL-E Datasheet (PDF)
Price (USD)
1: USD 0.825 ea
Line Total: USD 0.82 
Availability : 4483
  
Ship by Wed. 12 Nov to Fri. 14 Nov
QtyUnit Price
1$ 0.825
10$ 0.5087
100$ 0.3001
500$ 0.2178
1000$ 0.1958
3000$ 0.1628
6000$ 0.1518
9000$ 0.1408

Availability 115
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3984
10$ 0.3902
30$ 0.3846
100$ 0.2843


Availability 4483
Ship by Wed. 12 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.825
10$ 0.5087
100$ 0.3001
500$ 0.2178
1000$ 0.1958
3000$ 0.1628
6000$ 0.1518
9000$ 0.1408

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CPH3116-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPH3116-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN6405F CPH3116/CPH3216 Bipolar Transistor CPH3116/CPH3216 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =(--)40V, I =0A (--)0.1 A CBO CB E Emitter Cutoff Current I V =(--)4V, I =0A (--)0.1 A EBO EB C DC Current Gain h V =(--)2V, I =(--)100mA 200 560 FE CE C Gain-Bandwidth Product f V =(--)10V, I =(--)300mA 420 MHz T CE C Output Capacitance Cob V =(--)10V, f=1MHz (9)6 pF CB Collector-to-Emitter Saturation Voltage V (sat)1 I =(--)500mA, I =(--)10mA (--280)130 (--430)190 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I =(--)300mA, I =(--)6mA (--145)90 (--220)135 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =(--)500mA, I =(--)10mA (--)0.81 (--)1.2 V BE C B Collector-to-Base Breakdown Voltage V I =(--)10A, I =0A (--50)80 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =(--)100A,R =0 (--50)80 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I =(--)1mA, R = (--)50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =(--)10A, I =0A (--)5 V (BR)EBO E C Turn-On Time t 35 ns on Storage Time t See speci ed Test Circuit. (170)330 ns stg Fall Time t (30)40 ns f Switching Time Test Circuit I B1 PW=20 s DC 1% I B2 OUTPUT INPUT R B V R R L + + 50 100 F 470 F V = --5V V =25V BE CC I =20I = --20I =500mA C B1 B2 (For PNP, the polarity is reversed.) Ordering Information Device Package Shipping memo CPH3116-TL-E CPH3 3,000pcs./reel Pb Free CPH3216-TL-E CPH3 3,000pcs./reel Pb Free I -- V I -- V C CE C CE --1000 1000 CPH3116 40mA 30mA --800 800 --600 600 --400 400 --2mA 200 --200 I =0mA I =0mA CPH3216 B B 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 0 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, V -- V IT01643 Collector-to-Emitter Voltage, V -- V IT01644 CE CE No.6405-2/7 2mA 6mA 4mA 8mA 10mA - -4mA --6mA --8mA --10mA --20mA --30mA --40mA --50mA 20mA 50mA Collector Current, I -- A C Collector Current, I -- A C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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