X-On Electronics has gained recognition as a prominent supplier of CPH6122-TL-E Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. CPH6122-TL-E Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

CPH6122-TL-E ON Semiconductor

CPH6122-TL-E electronic component of ON Semiconductor
CPH6122-TL-E ON Semiconductor
CPH6122-TL-E Bipolar Transistors - BJT
CPH6122-TL-E  Semiconductors

Images are for reference only
See Product Specifications
Part No. CPH6122-TL-E
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT PNP 30V 3A 6-Pin CPH T/R
Datasheet: CPH6122-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5287 ea
Line Total: USD 0.53 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 12 May to Fri. 16 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.2518
6000 : USD 0.2511
9000 : USD 0.2503
12000 : USD 0.2496
15000 : USD 0.2489
24000 : USD 0.2481
30000 : USD 0.2473
45000 : USD 0.2466
75000 : USD 0.2457

0
Ship by Mon. 12 May to Fri. 16 May
MOQ : 6000
Multiples : 6000
6000 : USD 0.1407

0
Ship by Thu. 08 May to Mon. 12 May
MOQ : 1
Multiples : 1
1 : USD 0.5287
10 : USD 0.4038
100 : USD 0.2004
1000 : USD 0.1639

0
Ship by Thu. 08 May to Mon. 12 May
MOQ : 5
Multiples : 5
5 : USD 0.3653
25 : USD 0.3259
65 : USD 0.2391
175 : USD 0.226

0
Ship by Mon. 12 May to Fri. 16 May
MOQ : 2051
Multiples : 1
2051 : USD 0.2286

   
Manufacturer
Product Category
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Frequency
Operating Temperature Classification
Operating Temp Range
Number Of Elements
Collector-Base Voltage
Power Dissipation
Mounting
Emitter-Base Voltage
Package Type
Pin Count
Rad Hardened
Collector Current Dc
Category
Collector-Emitter Voltage
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CPH6122-TL-E from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CPH6122-TL-E and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Ordering number : EN7225B CPH6122 Bipolar Transistor CPH6122 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = -30V, I =0A -0.1 A CBO CB E Emitter Cutoff Current I V = -4V, I =0A -0.1 A EBO EB C DC Current Gain h V = -2V, I = -500mA 200 560 FE CE C Gain-Bandwidth Product f V = -10V, I = -500mA 400 MHz T CE C Output Capacitance Cob V = -10V, f=1MHz 25 pF CB V (sat)1 I = -1.5A, I = -30mA -180 -270 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I = -1.5A, I = -75mA -120 -180 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I = -1.5A, I = -30mA -0.83 -1.2 V BE C B Collector-to-Base Breakdown Voltage V I = -10A, I =0A -30 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I = -1mA, R = -30 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I = -10A, I =0A -5 V (BR)EBO E C Turn-On Time t 50 ns on Storage Time t See speci ed Test Circuit. 270 ns stg Fall Time t 27 ns f Switching Time Test Circuit I B1 PW=20 s OUTPUT D.C.1% I B2 INPUT R B 24 V R 50 ++ 100 F 470 F V =5V V = --12V BE CC --20I 1=20I 2=I = --500mA B B C Ordering Information Device Package Shipping memo CPH6122-TL-E CPH6 3,000pcs./reel Pb Free I -- V I -- V C CE C BE --2.0 --3.0 V = --2V CE --1.8 --2.5 --1.6 --1.4 --2.0 --1.2 --1.5 --1.0 --0.8 --1.0 --0.6 --0.4 --0.5 --0.2 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Collector-to-Emitter Voltage, V -- V IT04554 Bass-to-Emitter Voltage, V -- V IT04555 CE BE No.7225-2/6 --2mA I =0mA B --4mA --6mA --8mA --10mA --20mA --30mA --40mA --50mA Ta=75C 25C --25C Collector Current, I -- A C Collector Current, I -- A C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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