X-On Electronics has gained recognition as a prominent supplier of CPH6531-TL-E bipolar transistors - bjt across the USA, India, Europe, Australia, and various other global locations. CPH6531-TL-E bipolar transistors - bjt are a product manufactured by ON Semiconductor. We provide cost-effective solutions for bipolar transistors - bjt, ensuring timely deliveries around the world.

CPH6531-TL-E

CPH6531-TL-E electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.CPH6531-TL-E
Manufacturer: ON Semiconductor
Category:Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT BIP PNPPNP 1A 50V
Datasheet: CPH6531-TL-E Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 2466
Multiples : 2466
2466 : USD 0.176
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.572
10 : USD 0.4738
100 : USD 0.2885
1000 : USD 0.2238
3000 : USD 0.1903
9000 : USD 0.1778
24000 : USD 0.1679
45000 : USD 0.1642
N/A

Obsolete
0 - WHS 3

MOQ : 3000
Multiples : 3000
3000 : USD 0.1618
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Ordering number : ENA0521A CPH6531 Bipolar Transistor CPH6531 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = -40V, I =0A -0.1 A CBO CB E Emitter Cutoff Current I V = -4V, I =0A -0.1 A EBO EB C DC Current Gain h V = -2V, I = -100mA 200 560 FE CE C Gain-Bandwidth Product f V = -10V, I = -300mA 420 MHz T CE C Output Capacitance Cob V = -10V, f=1MHz 9 pF CB V (sat)1 I = -500mA, I = -10mA -230 -380 mV CE C B Collector-to-Emitter Saturation Voltage V (sat)2 I = -300mA, I = -6mA -125 -200 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I = -500mA, I = -10mA -0.81 -1.2 V BE C B Collector-to-Base Breakdown Voltage V I = -10A, I =0A -50 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I = -100A, R =0 -50 V (BR)CES C BE Collector-to-Emitter Breakdown Voltage V I = -1mA, R = -50 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I = -10A, I =0A -5 V (BR)EBO E C Turn-On Time t 35 ns on Storage Time t See speci ed Test Circuit. 170 ns stg Fall Time t 30 ns f Switching Time Test Circuit I B1 I C PW=20 s V OUT D.C. 1% I B2 V IN R V B R R L 50 ++ 100 F 470 F V =5V V = --25V BE CC 20I = --20I =I = --500mA B1 B2 C Ordering Information Device Package Shipping memo CPH6531-TL-E CPH6 3,000pcs./reel Pb Free I -- V I -- V BE C CE C --1.0 --1.0 V = --2V CE --0.9 --0.9 --0.8 --0.8 --0.7 --0.7 --0.6 --0.6 --0.5 --0.5 --2mA --0.4 --0.4 --0.3 --0.3 --0.2 --0.2 --0.1 --0.1 I =0mA B 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Collector-to-Emitter Voltage, V -- V IT11440 Base-to-Emitter Voltage, V -- V IT11415 CE BE No. A0521-2/6 --4mA --6mA --10mA --8mA --20mA --30mA --40mA --50mA Ta=75C --25C 25C Collector Current, I -- A C Collector Current, I -- A C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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