Ordering number : ENA1064B EC3H02BA SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise EC3H02BA Amplifier Applications Features Low noise : NF=1.0dB typ (f=1GHz). 2 High gain : S21e =12dB typ (f=1GHz). High cutoff frequency : f =7GHz typ. T Ultrasmall (1006size), slim (0.5mm) leadless package. Halogen free compliance (UL94 HB). Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to- Base Voltage V 20 V CBO Collector-to-Emitter Voltage V 10 V CEO Emitter-to-Base Voltage V 2V EBO Collector Current I 70 mA C Collector Dissipation P 100 mW C Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =10V, I =0A 1.0 A CBO CB E Emitter Cutoff Current I V =1V, I =0A 10 A EBO EB C DC Current Gain h V =5V, I =20mA 120 180 FE CE C Gain-Bandwidth Product f1V =5V, I =20mA 5 7 GHz T CE C Output Capacitance Cob V =10V, f=1MHz 0.7 1.2 pF CB Reverse Transfer Capacitance Cre V =10V, f=1MHz 0.45 pF CB Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to standard applicatio, intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for anyspecial applicatio (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. wwwEC3H02BA Continued from preceding page. Ratings Parameter Symbol Conditions Unit min typ max 2 S21e1V =5V, I =20mA, f=1GHz 9 12 dB CE C Forward Transfer Gain 2 S21e2V =2V, I =3mA, f=1GHz 8.5 dB CE C Noise Figure NF V =5V, I =7mA, f=1GHz 1.0 1.8 dB CE C Package Dimensions unit : mm (typ) 7039A-005 0.6 Polarity discriminating mark 3 2 1 0.5 1 1 : Collector 2 : Base 3 2 0.15 3 : Emitter 0.35 SANYO : ECSP1006-3 Type No. Indication (Top view) Electrical Connection (Top view) Polarity mark (Top) B Base Collector Emitter *Electrodes : Bottom Polarity mark (Top) Collector Base Emitter No. A1064-2/5 0.5 1.0 0.65 0.025 0.25