FJV4101R PNP Epitaxial Silicon Transistor with Bias Resistor November 2013 FJV4101R PNP Epitaxial Silicon Transistor with Bias Resistor Features Description 100 mA Output Current Capability Transistors with built-in resistors can be excellent Built-in Bias Resistor (R = 4.7 k, R = 4.7 k) space- and cost-saving solutions by reducing compo- 1 2 nent count and simplifying circuit design. Application Switching, Interface, and Driver Circuits Inverters Digital Applications in Industrial Segments Equivalent Circuit C 3 R1 B 2 R2 SOT-23 1 1. Base 2. Emitter 3. Collector E Ordering Information Part Number Top Mark Package Packing Method FJV4101RMTF R71 SOT-23 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current -100 mA C T Junction Temperature 150 C J T Storage Temperature -55 to 150 C STG 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FJV4101R Rev. 1.1.2 1 FJV4101R PNP Epitaxial Silicon Transistor with Bias Resistor (1) Thermal Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit Power Dissipation 200 mW P D = 25C 1.60 mW/C Derate Above T A R Thermal Resistance, Junction to Ambient 625 C/W JA Note: 3 1. FR-4 76 x 114 x 0.6T mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Typ. Max. Unit BV Collector-Base Breakdown Voltage I = -10 A, I = 0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100 A, I = 0 -50 V CEO C B I Collector Cut-Off Current V = -40 V, I = 0 -0.1 A CBO CB E h DC Current Gain V = -5 V, I = -10 mA 20 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10 mA, I = -0.5 mA -0.3 V CE C B f Current Gain Bandwidth Product V = -10 V, I = -5 mA 200 MHz T CE C V = -10 V, I = 0, CB E C Output Capacitance 5.5 pF ob f = 1.0 MHz V (off) Input-Off Voltage V = -5 V, I = -100 A-0.5V I CE C V (on) Input-On Voltage V = -0.3 V, I = -20 mA -3 V I CE C R Input Resistor 3.2 4.7 6.2 k 1 R /R Resistor Ratio 0.9 1.0 1.1 1 2 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com FJV4101R Rev. 1.1.2 2