X-On Electronics has gained recognition as a prominent supplier of KSC1008YBU Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. KSC1008YBU Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

KSC1008YBU ON Semiconductor

KSC1008YBU electronic component of ON Semiconductor
KSC1008YBU ON Semiconductor
KSC1008YBU Bipolar Transistors - BJT
KSC1008YBU  Semiconductors

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See Product Specifications
Part No. KSC1008YBU
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 60 V 700 mA 50MHz 800 mW Through Hole TO-92-3
Datasheet: KSC1008YBU Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3704: USD 0.0702 ea
Line Total: USD 260.02 
Availability - 15018
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ: 3704  Multiples: 1
Pack Size: 1
Availability Price Quantity
18915
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 1728
Multiples : 1
1728 : USD 0.0724
2500 : USD 0.0692
7500 : USD 0.0655
30000 : USD 0.0614
50000 : USD 0.0605
100000 : USD 0.0596
150000 : USD 0.0587
250000 : USD 0.0578

15018
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 3704
Multiples : 1
3704 : USD 0.0702
6043 : USD 0.043
7143 : USD 0.0364

18979
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 1158
Multiples : 1
1158 : USD 0.2247
1887 : USD 0.1378
3040 : USD 0.0856
4057 : USD 0.0641

17372
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 5515
Multiples : 1
5515 : USD 0.085
10000 : USD 0.0757
100000 : USD 0.0636

11974
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 5515
Multiples : 1
5515 : USD 0.085
10000 : USD 0.0757
100000 : USD 0.0636

15018
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 7143
Multiples : 1
7143 : USD 0.0364

18915
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 3000
Multiples : 500
3000 : USD 0.0979
3000 : USD 0.0936
7500 : USD 0.0851
30000 : USD 0.0798
50000 : USD 0.0786

7812
Ship by Mon. 16 Jun to Fri. 20 Jun
MOQ : 5515
Multiples : 1
5515 : USD 0.085
10000 : USD 0.0757
100000 : USD 0.0636

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the KSC1008YBU from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the KSC1008YBU and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NPN Epitaxial Silicon Transistor KSC1008 Features LowFrequency Amplifier Medium Speed Switching www.onsemi.com High CollectorBase Voltage: V = 80 V CBO Collector Current: I = 700 mA C Suffix C means Center Collector (1. Emitter 2. Collector 3. Base) Non Suffix C means Side Collector (1. Emitter 2. Base TO923 3. Collector) CASE 135AN Complement to KSA708 These are PbFree Devices 1 2 3 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted.) A Symbol Parameter Value Unit TO923 LF CASE 135AR V CollectorBase Voltage 80 V CBO 1 2 V CollectorEmitter Voltage 60 V CEO 3 V EmitterBase Voltage 8 V EBO KSC1008: 1. Emitter 2. Base 3. Collector I Collector Current 700 mA C KSC1008C: 1. Emitter 2. Collector 3. Base T Junction Temperature 150 C J T Storage Temperature 55 to 150 C STG MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. AC1 008X THERMAL CHARACTERISTICS YWW (T = 25C unless otherwise noted.) (Note 1) A Symbol Parameter Value Unit P Power Dissipation 800 mW D A = Assembly Code Derate Above 25 C 6.4 mW/ C C1008 = Device Code R Thermal Resistance, 156 C/W JA X = O/Y/YC/G JunctiontoAmbient YWW = Date Code 1. PCB size: FR4, 76 mm 114 mm 1.57 mm (3.0 inch 4.5 inch 0.062 inch) with minimum land pattern size. ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: August, 2021 Rev. 2 KSC1008/DKSC1008 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Symbol Parameter Conditions Min Typ Max Unit BV CollectorBase Breakdown Voltage I = 100 A, I = 0 80 V CBO C E BV CollectorEmitter Breakdown Voltage I = 10 mA, I = 0 60 V CEO C B BV EmitterBase Breakdown Voltage 8 V I = 10 A, I = 0 EBO E C I Collector CutOff Current V = 60 V, I = 0 0.1 A CBO CB E I Emitter CutOff Current V = 5 V, I = 0 0.1 A EBO EB C h DC Current Gain V = 2 V, I = 50 mA 40 400 FE CE C V CollectorEmitter Saturation Voltage I = 500 mA, I = 50 mA 0.2 0.4 V CE(sat) C B V BaseEmitter Saturation Voltage I = 500 mA, I = 50 mA 0.86 1.10 V BE(sat) C B f Current Gain Bandwidth Product V = 10 V, I = 50 mA 30 50 MHz T CE C C Output Capacitance V = 10 V, I = 0, f = 1 MHz 8 pF ob CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h Classification FE Classification O Y G hFE 70 ~ 140 120 ~ 240 200 ~ 400 ORDERING INFORMATION (Note 2) Part Number Top Mark Package Shipping KSC1008OBU C1008 O TO923 10000 / Bulk Bag (PbFree) KSC1008YBU C1008 Y 10000 / Bulk Bag KSC1008YTA C1008 Y TO923 LR 2000 / FanFold (PbFree) KSC1008CYTA C1008 YC 2000 / FanFold KSC1008GTA C1008 G 2000 / FanFold 2. Affix C means center collector pin. Affix O, Y, G means h classification. Suffix BU means bulk packing, straight lead form. FE Suffix TA means tape and ammo packing, 0.200 in line spacing lead form. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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