NPN Epitaxial Silicon Transistor KSC2383 ABSOLUTE MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted.) A www.onsemi.com Symbol Parameter Value Unit V CollectorBase Voltage 160 V CBO V CollectorEmitter Voltage 160 V CEO V EmitterBase Voltage 6 V EBO I Collector Current 1 A C I Base Current 0.5 A B TO92 3 LF CASE 135AM T Junction Temperature 150 C J T Storage Temperature 55 to +150 C STG MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS AC2 (Values are at T = 25C unless otherwise noted.) (Note 1) A 383X YWW Symbol Parameter Value Unit P Power Dissipation 900 mW D Derate Above 25 C 7.2 mW/C R Thermal Resistance, 138 C/W JA JunctiontoAmbient 1. PCB size: FR4, 76 mm 114 mm 1.57 mm (3.0 inch 4.5 inch 0.062 inch) with minimum land pattern size. 1: Emitter 2: Collector 3: Base 12 3 A = Assembly Code C2383 = Device Code X = O / Y YWW = Date Code ORDERING INFORMATION Device Package Shipping KSC2383OTA TO92 3 LF 2000 / (PbFree) FanFold KSC2383YTA TO92 3 LF 2000 / (PbFree) FanFold Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: March, 2021 Rev. 3 KSC2383/DKSC2383 ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.) A Symbol Parameter Conditions Min. Typ. Max. Unit I Collector CutOff Current V = 150 V, I = 0 1 A CBO CB E I Emitter CutOff Current V = 6 V, I = 0 1 A EBO EB C BV CollectorEmitter Breakdown Voltage I = 10 mA, I = 0 160 V CEO C B h DC Current Gain V = 5 V, I = 200 mA 60 320 FE CE C V (sat) CollectorEmitter Saturation Voltage I = 500 mA, I = 50 mA 1.5 V CE C B V (on) BaseEmitter On Voltage V = 5 V, I = 5 mA 0.45 0.75 V BE CE C f Current Gain Bandwidth Product V = 5 V, I = 200 mA 20 100 MHz T CE C C Output Capacitance V = 10 V, I = 0, f = 1 MHz 20 pF ob CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. h CLASSIFICATION FE Classification R O Y h 60 ~ 120 100 ~ 200 160 ~ 320 FE TYPICAL PERFORMANCE CHARACTERISTICS 1.4 1000 Emitter Common Emitter Common 1.2 T = 25C A V = 10 V CE I = 15 mA B I = 10 mA 1.0 B 100 I = 6 mA B V = 5 V CE 0.8 I = 4 mA B 0.6 I = 3 mA B I = 2.5 mA 10 B 0.4 I = 2 mA B I = 1.5 mA B 0.2 I = 1 mA B I = 0.5 mA B 0.0 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 100 1000 V , CollectorEmitter Voltage (V) I , Controller Current (mA) CE C Figure 1. Static Characteristic Figure 2. DC Current Gain 1000 1 Emitter Common Emitter Common T = 25C T = 25C A A 0.1 I / I = 10 C B 100 V = 10 V CE I / I = 5 C B V = 5 V 0.01 CE V = 1 V CE 10 0.001 100 1000 1 10 100 1000 I , Controller Current (mA) I , Controller Current (mA) C C Figure 3. DC Current Gain Figure 4. CollectorEmitter Saturation Voltage www.onsemi.com 2 I , Collector Current (mA) h , DC Current Gain C FE V (sat), V (sat), Saturation BE CE h , DC Current Gain Voltage (V) FE