X-On Electronics has gained recognition as a prominent supplier of MBT3904DW1T1 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MBT3904DW1T1 Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MBT3904DW1T1 ON Semiconductor

MBT3904DW1T1 electronic component of ON Semiconductor
MBT3904DW1T1 ON Semiconductor
MBT3904DW1T1 Bipolar Transistors - BJT
MBT3904DW1T1  Semiconductors

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See Product Specifications
Part No. MBT3904DW1T1
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 200mA 60V Dual NPN
Datasheet: MBT3904DW1T1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
44: USD 3.045 ea
Line Total: USD 133.98 
Availability - 7017
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ: 44  Multiples: 1
Pack Size: 1
Availability Price Quantity
7017
Ship by Tue. 01 Jul to Mon. 07 Jul
MOQ : 44
Multiples : 1
44 : USD 3.045
46 : USD 2.9006
47 : USD 2.8219
50 : USD 2.7169
100 : USD 2.5987
250 : USD 2.4019
500 : USD 2.2181

   
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We are delighted to provide the MBT3904DW1T1 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MBT3904DW1T1 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spinoff of DIAGRAM our popular SOT23/SOT323 threeleaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT363 SOT363/SC88/ sixleaded surface mount package. By putting two discrete devices in XX M 6 SC706 one package, this device is ideal for lowpower surface mount  CASE 419B applications where board space is at a premium. 1 1 Features XX = MA for MBT3904DW1T1G h , 100300 FE MJ for MBT3904DW2T1G Low V , 0.4 V M = Date Code CE(sat)  = PbFree Package Simplifies Circuit Design (Note: Microdot may be in either location) Reduces Board Space Reduces Component Count (3) (2) (1) Available in 8 mm, 7inch/3,000 Unit Tape and Reel S and NSV Prefix for Automotive and Other Applications Requiring Q Q 1 2 Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS (4) (5) (6) Compliant MBT3904DW1T1 MAXIMUM RATINGS STYLE 1 (3) (2) (1) Rating Symbol Value Unit CollectorEmitter Voltage V 40 Vdc CEO Q 2 CollectorBase Voltage V 60 Vdc CBO Q 1 EmitterBase Voltage V 6.0 Vdc EBO Collector Current Continuous I 200 mAdc C (4) (5) (6) Electrostatic Discharge ESD HBM Class 2 MM Class B MBT3904DW2T1 STYLE 27 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping THERMAL CHARACTERISTICS MBT3904DW1T1G, 3000 / SOT363 Characteristic Symbol Max Unit MBT3904DW2T1G Tape & Reel (PbFree) Total Package Dissipation (Note 1) P 150 mW D SMBT3904DW1T1G SOT363 3000 / T = 25C A (PbFree) Tape & Reel Thermal Resistance, R 833 C/W JA JunctiontoAmbient NSVMBT3904DW1T3G 10000 / SOT363 Tape & Reel (PbFree) Junction and Storage T , T 55 to +150 C J stg Temperature Range For information on tape and reel specifications, 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum including part orientation and tape sizes, please recommended footprint. s refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2015 Rev. 11 MBT3904DW1T1/DMBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 40 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) 60 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 6.0 E C Base Cutoff Current I nAdc BL (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) 50 CE EB ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 300 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 4.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 8.0 EB C Input Impedance h k  ie (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 1.0 10 CE C 2.0 12 4 Voltage Feedback Ratio h X 10 re (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 0.5 8.0 CE C 0.1 10 SmallSignal Current Gain h fe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 100 400 CE C 100 400 Output Admittance h mhos oe (V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 1.0 40 CE C 3.0 60 Noise Figure NF dB (V = 5.0 Vdc, I = 100 Adc, R = 1.0 k , f = 1.0 kHz) 5.0 CE C S 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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