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This literature is subject to all applicable copyright laws and is not for resale in any manner.MJD117 MJD117 D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular TIP117 1.Base 2.Collector 3.Emitter PNP Silicon Darlington Transistor Absolute Maximum Ratings T =25C unless otherwise noted C Equivalent Circuit C Symbol Parameter Value Units V Collector-Base Voltage - 100 V CBO V Collector-Emitter Voltage - 100 V CEO B V Emitter-Base Voltage - 5 V EBO I Collector Current (DC) - 2 A C I Collector Current (Pulse) - 4 A CP I Base Current - 50 mA B R1 R2 P Collector Dissipation (T =25C) 20 W C C E R11 0k Collector Dissipation (T =25C) 1.75 W a R20 .6k T Junction Temperature 150 C J T Storage Temperature - 65 ~ 150 C STG Electrical Characteristics T =25C unless otherwise noted C Symbol Parameter Test Condition Min. Max. Units V (sus) *Collector-Emitter Sustaining Voltage I = - 30mA, I = 0 - 100 V CEO C B I Collector Cut-off Current V = - 50V, I = 0 - 20 A CEO CE B I Collector Cut-off Current V = - 100V, I = 0 - 20 A CBO CB E I Emitter Cut-off Current V = - 5V, I = 0 - 2 mA EBO EB C h *DC Current Gain V = - 3V, V = - 0.5A 500 FE CE EB V = - 3V, V = - 2A 1000 12K CE EB V = - 3V, I = - 4A 200 CE C V - 2 V (sat) *Collector-Emitter Saturation Voltage I = -2A, I = - 8mA CE C B I = - 4A, I = - 40mA - 3 V C B V (sat) *Base-Emitter Saturation Voltage I = - 4A, I = - 40mA - 4 V BE C B V (on) *Base-Emitter ON Voltage V = - 3A, I = - 2A - 2.8 V BE CE C f Current Gain Bandwidth Product V = -10V, I = - 0.75A 25 MHz T CE C C Output Capacitance V = - 10V, I = 0 200 pF ob CB E f= 0.1MHz * Pulse Test: PW300 s, Duty Cycle2% 2001 Fairchild Semiconductor Corporation Rev. A2, June 2001