MJ21195G - PNP MJ21196G - NPN Silicon Power Transistors The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. MJ21195G PNP MJ21196G NPN ELECTRICAL CHARACTERISTICS (T = 25C 5C unless otherwise noted) C Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V 250 Vdc CEO(sus) (I = 100 mAdc, I = 0) C B Collector Cutoff Current I 100 Adc CEO (V = 200 Vdc, I = 0) CE B Emitter Cutoff Current I 100 Adc EBO (V = 5 Vdc, I = 0) CE C Collector Cutoff Current I 100 Adc CEX (V = 250 Vdc, V = 1.5 Vdc) CE BE(off) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I Adc S/b (V = 50 Vdc, t = 1 s (nonrepetitive) 5 CE (V = 80 Vdc, t = 1 s (nonrepetitive) 2.5 CE ON CHARACTERISTICS DC Current Gain h 75 FE (I = 8 Adc, V = 5 Vdc) 25 C CE (I = 16 Adc, V = 5 Vdc) 8 C CE BaseEmitter On Voltage V 2.2 Vdc BE(on) (I = 8 Adc, V = 5 Vdc) C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 8 Adc, I = 0.8 Adc) 1.4 C B (I = 16 Adc, I = 3.2 Adc) 4 C B DYNAMIC CHARACTERISTICS Total Harmonic Distortion at the Output T % HD V = 28.3 V, f = 1 kHz, P = 100 W h RMS LOAD RMS FE unmatched 0.8 (Matched pair h = 50 5 A/5 V) h FE FE matched 0.08 Current Gain Bandwidth Product f 4 MHz T (I = 1 Adc, V = 10 Vdc, f = 1 MHz) C CE test Output Capacitance C 500 pF ob (V = 10 Vdc, I = 0, f = 1 MHz) CB E test 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2% PNP MJ21195G NPN MJ21196G 6.5 7.5 6.0 7.0 V = 10 V CE 5.5 6.5 5.0 6.0 5 V 4.5 5.5 4.0 5.0 10 V 3.5 4.5 3.0 4.0 V = 5 V CE 2.5 3.5 2.0 3.0 2.5 1.5 T = 25C J T = 25C J 2.0 1.0 f = 1 MHz test f = 1 MHz test 0.5 1.5 1.0 0 0.1 1.0 10 0.1 1.0 10 I , COLLECTOR CURRENT (AMPS) I , COLLECTOR CURRENT (AMPS) C C Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product