MJD148 NPN Silicon Power Transistor DPAK for Surface Mount Applications Designed for general purpose amplifier and low speed switching www.onsemi.com applications. Features POWER TRANSISTOR High Gain 4.0 AMPERES Low Saturation Voltage 45 VOLTS, 20 WATTS High Current Gain Bandwidth Product COLLECTOR Epoxy Meets UL 94 V0 0.125 in 2, 4 NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 1 BASE These Devices are PbFree and are RoHS Compliant 3 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit 4 CollectorEmitter Voltage V 45 Vdc CEO CollectorBase Voltage V 45 Vdc CB 1 2 3 EmitterBase Voltage V 5.0 Vdc EB DPAK Collector Current Continuous I 4.0 Adc C CASE 369C Collector Current Peak I 7.0 Adc STYLE 1 CM Base Current I 50 mAdc B MARKING DIAGRAM Total Power Dissipation P D T = 25C 20 W C Derate above 25C 0.16 W/C Total Power Dissipation (Note 1) P AYWW D T = 25C 1.75 W A J148G Derate above 25C 0.014 W/C Operating and Storage Junction T , T 55 to +150 C J stg Temperature Range A = Assembly Location ESD Human Body Model HBM 3B V Y = Year WW = Work Week ESD Machine Model MM C V J148 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the G = PbFree Package device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad ORDERING INFORMATION sizes recommended. Device Package Shipping MJD148T4G DPAK 2,500/Tape & Reel (PbFree) NJVMJD148T4G DPAK 2,500/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2016 Rev. 9 MJD148/DMJD148 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 6.25 C/W JC Thermal Resistance, JunctiontoAmbient (Note 2) R 71.4 C/W JA 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) V Vdc CEO(sus) (I = 100 mAdc, I = 0) 45 C B Collector Cutoff Current I Adc CBO (V = 45 Vdc, I = 0) 20 CB E Emitter Cutoff Current I mAdc EBO (V = 5 Vdc, I = 0) 1 BE C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 10 mAdc, V = 5 Vdc) 40 C CE (I = 0.5 Adc, V = 1 Vdc) 85 375 C CE (I = 2 Adc, V = 1 Vdc) 50 C CE (I = 3 Adc, V = 1 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 2 Adc, I = 0.2 Adc) 0.5 C B BaseEmitter On Voltage V Vdc BE(on) (I = 2 Adc, V = 1 Vdc) 1.1 C CE DYNAMIC CHARACTERISTICS CurrentGainBandwidth Product f MHz T (I = 250 mAdc, V = 1 Vdc, f = 1 MHz) 3 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. www.onsemi.com 2