MJD44H11T4G ON Semiconductor

MJD44H11T4G electronic component of ON Semiconductor
MJD44H11T4G ON Semiconductor
MJD44H11T4G Bipolar Transistors - BJT
MJD44H11T4G  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of MJD44H11T4G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MJD44H11T4G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. MJD44H11T4G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 8A 80V 20W NPN
Datasheet: MJD44H11T4G Datasheet (PDF)
Price (USD)
1: USD 0.6984 ea
Line Total: USD 0.7 
Availability : 14886
  
Ship by Wed. 08 Oct to Tue. 14 Oct
QtyUnit Price
1$ 0.6984
10$ 0.537
30$ 0.4564
100$ 0.2902
500$ 0.2199
1000$ 0.2124

Availability 43650
Ship by Wed. 08 Oct to Tue. 14 Oct
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.2866
5000$ 0.2805
7500$ 0.2792
10000$ 0.2778
25000$ 0.2764
50000$ 0.2749


Availability 4454
Ship by Wed. 08 Oct to Tue. 14 Oct
MOQ : 222
Multiples : 1
QtyUnit Price
222$ 1.1743
357$ 0.729
422$ 0.6171
480$ 0.5426
485$ 0.5371
639$ 0.4074
1000$ 0.3239
3000$ 0.302


Availability 244925
Ship by Wed. 08 Oct to Tue. 14 Oct
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.2829
5000$ 0.2652
10000$ 0.2626


Availability 14886
Ship by Wed. 08 Oct to Tue. 14 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6984
10$ 0.537
30$ 0.4564
100$ 0.2902
500$ 0.2199
1000$ 0.2124


Availability 4454
Ship by Wed. 08 Oct to Tue. 14 Oct
MOQ : 422
Multiples : 1
QtyUnit Price
422$ 0.5981
480$ 0.5259
485$ 0.5206
639$ 0.3949
1000$ 0.314
3000$ 0.2927


Availability 1261
Ship by Mon. 06 Oct to Wed. 08 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.204
10$ 0.889
20$ 0.7798
45$ 0.4284
124$ 0.406


Availability 244925
Ship by Wed. 08 Oct to Tue. 14 Oct
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.2545


Availability 43650
Ship by Wed. 08 Oct to Tue. 14 Oct
MOQ : 2500
Multiples : 2500
QtyUnit Price
2500$ 0.3268
5000$ 0.3253
7500$ 0.3199
10000$ 0.3183
25000$ 0.3167


Availability 1450
Ship by Wed. 08 Oct to Tue. 14 Oct
MOQ : 222
Multiples : 1
QtyUnit Price
222$ 1.1353
605$ 0.4171
610$ 0.4133
1000$ 0.3949

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Category
Brand Category
LoadingGif
 
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We are delighted to provide the MJD44H11T4G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJD44H11T4G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The MJD44H11T4G is an NPN (Negative-Positive-Negative) bipolar transistor manufactured by ON Semiconductor. It is an 8 Amp device with a maximum voltage rating of 80VDC and a power dissipation of 20 Watts. It is composed of two N-type emitter and collector regions separated by a thin layer of P-type base material. This device has a wide variety of applications such as amplifier circuits, switching applications, and can be used along with other components to create various electronic systems. It's used in television sets, computers, cell phones, and automotive applications. This part is designed to be used with high voltage and current loads as well as in audio applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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