MJE13003 SWITCHMODE Series NPN Silicon Power Transistor These devices are designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications MJE13003 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (Note 2) CollectorEmitter Sustaining Voltage (I = 10 mA, I = 0) V 400 Vdc C B CEO(sus) Collector Cutoff Current I mAdc CEV (V = Rated Value, V = 1.5 Vdc) CEV BE(off) 1 (V = Rated Value, V = 1.5 Vdc, T = 100 C) CEV BE(off) C 5 Emitter Cutoff Current (V = 9 Vdc, I = 0) I 1 mAdc EB C EBO SECOND BREAKDOWN Second Breakdown Collector Current with bass forward biased I See Figure 11 S/b Clamped Inductive SOA with base reverse biased RBSOA See Figure 12 ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.5 Adc, V = 2 Vdc) C CE 8 40 (I = 1 Adc, V = 2 Vdc) C CE 5 25 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 0.5 Adc, I = 0.1 Adc) C B 0.5 (I = 1 Adc, I = 0.25 Adc) C B 1 (I = 1.5 Adc, I = 0.5 Adc) C B 3 (I = 1 Adc, I = 0.25 Adc, T = 100 C) C B C 1 BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 0.5 Adc, I = 0.1 Adc) C B 1 (I = 1 Adc, I = 0.25 Adc) C B 1.2 (I = 1 Adc, I = 0.25 Adc, T = 100 C) C B C 1.1 DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I = 100 mAdc, V = 10 Vdc, f = 1 MHz) f 4 10 MHz C CE T Output Capacitance (V = 10 Vdc, I = 0, f = 0.1 MHz) C 21 pF CB E ob SWITCHING CHARACTERISTICS Resistive Load (Table 1) Delay Time t 0.05 0.1 s d (V = 125 Vdc, I = 1 A, CC C Rise Time t 0.5 1 s r I = I = 0.2 A, t = 25 s, B1 B2 p Storage Time t 2 4 s Duty Cycle 1%) s Fall Time t 0.4 0.7 s f Inductive Load, Clamped (Table 1, Figure 13) Storage Time t 1.7 4 s sv (I = 1 A, V = 300 Vdc, C clamp Crossover Time t 0.29 0.75 s c I = 0.2 A, V = 5 Vdc, T = 100 C) B1 BE(off) C Fall Time t 0.15 s fi 2. Pulse Test: PW = 300 s, Duty Cycle 2%.