MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. MJE243G (NPN), MJE253G (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V V CEO(sus) (I = 10 mAdc, I = 0) 100 C B Collector Cutoff Current I CBO (V = 100 Vdc, I = 0) 0.1 A CB E (V = 100 Vdc, I = 0, T = 125 C) 0.1 mA CE E C Emitter Cutoff Current I Adc EBO (V = 7.0 Vdc, I = 0) 0.1 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 200 mAdc, V = 1.0 Vdc) 40 180 C CE (I = 1.0 Adc, V = 1.0 Vdc) 15 C CE CollectorEmitter Saturation Voltage V V CE(sat) (I = 500 mAdc, I = 50 mAdc) 0.3 C B (I = 1.0 Adc, I = 100 mAdc) 0.6 C B BaseEmitter Saturation Voltage V V BE(sat) (I = 2.0 Adc, I = 200 mAdc) 1.8 C B BaseEmitter On Voltage V V BE(on) (I = 500 mAdc, V = 1.0 Vdc) 1.5 C CE DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 100 mAdc, V = 10 Vdc, f = 10 MHz) 40 C CE test Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) 50 CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.