Complementary Silicon Power Transistors MJE270G (NPN), MJE271G (PNP) Features www.onsemi.com High Safe Operating Area I 40 V, 1.0 s = 0.375 A S/B 2.0 AMPERE CollectorEmitter Sustaining Voltage COMPLEMENTARY V = 100 Vdc (Min) CEO(sus) POWER DARLINGTON High DC Current Gain TRANSISTORS h 120 mA, 10 V = 1500 (Min) FE 100 VOLTS, 15 WATTS These Devices are PbFree and are RoHS Compliant NPN PNP MAXIMUM RATINGS COLLECTOR 2, 4 COLLECTOR 2, 4 Rating Symbol Value Unit CollectorEmitter Voltage V 100 Vdc BASE BASE CEO 1 1 CollectorBase Voltage V 100 Vdc CB EmitterBase Voltage V 5.0 Vdc EB Collector Current Continuous I 2.0 Adc C EMITTER 3 EMITTER 3 Collector Current Peak I 4.0 Adc CM MJE270 MJE271 Base Current I 0.1 Adc B Total Power Dissipation P D 15 W T = 25 C C 0.12 W/ C Derate above 25 C TO225 Total Power Dissipation P D CASE 7709 T = 25 C 1.5 W A Derate above 25 C 0.012 W/ C STYLE 3 Operating and Storage Junction T , T 65 to +150 C J stg 1 Temperature Range 2 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MARKING DIAGRAM assumed, damage may occur and reliability may be affected. YWW THERMAL CHARACTERISTICS JE27xG Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 8.33 C/W JC Y = Year Thermal Resistance, JunctiontoAmbient R 83.3 C/W JA WW = Work Week JE27x = Specific Device Code x= 0 or 1 G=PbFree Package ORDERING INFORMATION Device Package Shipping MJE270G TO225 500 Units / Box (PbFree) MJE270TG TO225 50 Units / Rail (PbFree) MJE271G TO225 500 Units / Box (PbFree) Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: July, 2020 Rev. 9 MJE270/DMJE270G (NPN), MJE271G (PNP) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) V Vdc CEO(sus) (I = 10 mAdc, I = 0) 100 C B Collector Cutoff Current I mAdc CEO (V = 100 Vdc, I = 0) 1.0 CE B Collector Cutoff Current I mAdc CBO (V = 100 Vdc, I = 0) 0.3 CB E Emitter Cutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 0.1 BE C SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased I Adc S/b (V = 40 Vdc, t = 1.0 s, Nonrepetitive) 375 CE ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 20 mAdc, V = 3.0 Vdc) 500 C CE (I = 120 mAdc, V = 10 Vdc) 1500 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 20 mAdc, I = 0.2 mAdc) 2.0 C B (I = 120 mAdc, I = 1.2 mAdc) 3.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 120 mAdc, V = 10 Vdc) 2.0 C CE DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (Note 2) f MHz T (I = 0.05 Adc, V = 5.0 Vdc, f = 1.0 MHz) 6.0 C CE test Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 2. f = h f . T fe test 10,000 10 7000 V = 3.0 V CE 5.0 150C 5000 3000 dc 1.0 25C 0.5 - 55C 1000 700 MJE270/MJE271 500 0.1 BONDING WIRE LIMIT 300 0.05 THERMAL LIMIT T = 25C C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 100 0.01 0.015 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 1.5 1.0 3.0 7.0 10 30 70 100 I , COLLECTOR CURRENT (AMPS) V , COLLECTOR-EMITTER VOLTAGE (VOLTS) C CE Figure 1. DC Current Gain Figure 2. Safe Operating Area www.onsemi.com 2 h , DC CURRENT GAIN FE I , COLLECTOR CURRENT (AMPS) C