MMBT2222 MMBT2222 NPN General Purpose Amplifier Sourced from process 19. C E SOT-23 B Mark: 1B Absolute Maximum Ratings* T =25C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Emitter Voltage 30 V CEO Collector-Base Voltage 60 V V CBO Emitter-Base Voltage 5.0 V V EBO I Collector Current - Continuous 0.6 A C , T Operating and Storage Junction Temperature Range -55 ~ 150 C T J STG * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Off Characteristics V Collector-Emitter Breakdown Voltage * I = 10mA, I = 0 30 V (BR)CEO C B V Collector-Base Breakdown Voltage I = 10 A, I = 0 60 V (BR)CBO C E V Emitter-Base Breakdown Voltage I = 10 A, I = 0 5.0 V (BR)EBO E C I Collector Cutoff Current V = 50V, I = 0 10 A CBO CB E = 50V, I = 0, T = 125C 10 A V CB E a Emitter Cutoff Current V = 3.0V, I = 0 10 nA I EBO EB C On Characteristics DC Current Gain I = 0.1mA, V = 10V 35 h FE C CE I = 1.0mA, V = 10V 50 C CE I = 10mA, V = 10V 75 C CE = 150mA, V = 10V * 100 300 I C CE I = 150mA, V = 1.0V * 50 C CE I = 500mA, V = 10V * 30 C CE V Collector-Emitter Saturation Voltage * I = 150mA, I = 15V 0.4 V CE(sat) C B = 500mA, I = 50V 1.6 I C B V Base-Emitter Saturation Voltage I = 150mA, I = 15V 1.3 V BE(sat) C B I = 500mA, I = 50V 2.6 C B 2004 Fairchild Semiconductor Corporation Rev. B, May 2004MMBT2222 Electrical Characteristics (Continued) T =25C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units Small Signal Characteristics f Curent Gain Bandwidth Product I = 20mA, V = 20V, f = 100MHz 250 T C CE C Output Capacitance V = 10V, I = 0, f = 1MHz 8.0 pF obo CB E C Input Capacitance V = 0.5V, I = 0, f = 1MHz 30 pF ibo EB C Switching Characteristics t Delay Time V = 30V, V = 0.5V, 10 ns d CC BE(OFF) I = 150mA, I = 15mA t Rise Time C B1 25 ns r t Storage Time V = 30V, I = 150mA, 225 ns s CC C I = I = 15mA t Fall Time B1 B2 60 ns f * Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Thermal Characteristics T =25C unless otherwise noted a Symbol Parameter Max. Units P Total Device Dissipation 350 mW D Derate above 25C 2.8 mW/C R Thermal Resistance, Junction to Ambient 357 C/W JA * Device mounted on FR-4PCB 1.6 1.6 0.06. 2004 Fairchild Semiconductor Corporation Rev. B, May 2004