X-On Electronics has gained recognition as a prominent supplier of MMBT3904WT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT3904WT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT3904WT1G ON Semiconductor

MMBT3904WT1G electronic component of ON Semiconductor
MMBT3904WT1G ON Semiconductor
MMBT3904WT1G Bipolar Transistors - BJT
MMBT3904WT1G  Semiconductors

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See Product Specifications
Part No. MMBT3904WT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 200mA 60V NPN
Datasheet: MMBT3904WT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
12000: USD 0.0244 ea
Line Total: USD 292.8 
Availability - 590730
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ: 12000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
168780
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 9000
Multiples : 3000
9000 : USD 0.0181
27000 : USD 0.0164
51000 : USD 0.0161
102000 : USD 0.0155
252000 : USD 0.0154
501000 : USD 0.015

5032
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 1595
Multiples : 1
1595 : USD 0.163
2588 : USD 0.1005
2615 : USD 0.0995
4619 : USD 0.0563
4663 : USD 0.0558
5971 : USD 0.0435
7435 : USD 0.035
10527 : USD 0.0247

590730
Ship by Fri. 13 Jun to Thu. 19 Jun
MOQ : 12000
Multiples : 3000
12000 : USD 0.0244
12000 : USD 0.0234
15000 : USD 0.019
15000 : USD 0.0187
21000 : USD 0.0159
30000 : USD 0.0151
75000 : USD 0.0144

1959
Ship by Fri. 20 Jun to Wed. 25 Jun
MOQ : 20
Multiples : 20
20 : USD 0.0652
200 : USD 0.0518
600 : USD 0.0333
3000 : USD 0.0227
9000 : USD 0.02
21000 : USD 0.0185

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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We are delighted to provide the MMBT3904WT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT3904WT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP General Purpose www.onsemi.com Transistors NPN and PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC70 package which 1 is designed for low power surface mount applications. BASE Features 2 S Prefix for Automotive and Other Applications Requiring Unique EMITTER Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS SC70 (SOT323) CASE 419 Compliant 1 STYLE 3 2 MAXIMUM RATINGS Rating Symbol Value Unit MARKING DIAGRAM CollectorEmitter Voltage V Vdc CEO MMBT3904WT1, SMMBT3904WT1 40 MMBT3906WT1, SMMBT3906WT1 40 xx M CollectorBase Voltage V Vdc CBO MMBT3904WT1, SMMBT3904WT1 60 MMBT3906WT1, SMMBT3906WT1 40 1 xx = AM for MMBT3904WT1, EmitterBase Voltage V Vdc EBO MMBT3904WT1, SMMBT3904WT1 6.0 SMMBT3904WT MMBT3906WT1, SMMBT3906WT1 5.0 = 2A for MMBT3906WT1, SMMBT3906WT1 Collector Current Continuous I mAdc C M = Date Code* MMBT3904WT1, SMMBT3904WT1 200 = PbFree Package MMBT3906WT1, SMMBT3906WT1 200 (Note: Microdot may be in either location) THERMAL CHARACTERISTICS *Date Code orientation may vary depending up- Characteristic Symbol Max Unit on manufacturing location. Total Device Dissipation (Note 1) P 150 mW D T = 25C A ORDERING INFORMATION Thermal Resistance, JunctiontoAmbient R 833 C/W JA Device Package Shipping Junction and Storage Temperature T , T 55 to +150 C J stg MMBT3904WT1G, SC70/ 3000 / Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the SMMBT3904WT1G SOT323 Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum MMBT3906WT1G, SC70/ 3000 / Tape & recommended footprint. SMMBT3906WT1G SOT323 Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: November, 2015 Rev. 9 MMBT3904WT1/DMMBT3904WT1G, NPN, SMMBT3904WT1G, NPN, MMBT3906WT1G, PNP, SMMBT3906WT1G, PNP ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MMBT3904WT1, SMMBT3904WT1 40 C B (I = 1.0 mAdc, I = 0) MMBT3906WT1, SMMBT3906WT1 40 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) MMBT3904WT1, SMMBT3904WT1 60 C E (I = 10 Adc, I = 0) MMBT3906WT1, SMMBT3906WT1 40 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO 6.0 (I = 10 Adc, I = 0) MMBT3904WT1, SMMBT3904WT1 E C 5.0 (I = 10 Adc, I = 0) MMBT3906WT1, SMMBT3906WT1 E C Base Cutoff Current I nAdc BL (V = 30 Vdc, V = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 50 CE EB (V = 30 Vdc, V = 3.0 Vdc) MMBT3906WT1, SMMBT3906WT1 50 CE EB Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) MMBT3904WT1, SMMBT3904WT1 50 CE EB (V = 30 Vdc, V = 3.0 Vdc) MMBT3906WT1, SMMBT3906WT1 50 CE EB ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) MMBT3904WT1, SMMBT3904WT1 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE (I = 0.1 mAdc, V = 1.0 Vdc) MMBT3906WT1, SMMBT3906WT1 60 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 80 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B (I = 10 mAdc, I = 1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 0.25 C B (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) MMBT3904WT1, SMMBT3904WT1 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B (I = 10 mAdc, I = 1.0 mAdc) MMBT3906WT1, SMMBT3906WT1 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B 2. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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