MMBT5551M3 NPN High Voltage Transistor The MMBT5551M3 device is a spinoff of our popular SOT23 threeleaded device. It is designed for general purpose high voltage applications and is housed in the SOT723 surface mount package. www.onsemi.com This device is ideal for lowpower surface mount applications where board space is at a premium. COLLECTOR Features 3 Reduces Board Space NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 BASE Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2 EMITTER Compliant MAXIMUM RATINGS MARKING Rating Symbol Value Unit DIAGRAM CollectorEmitter Voltage V 160 Vdc CEO 3 SOT723 CollectorBase Voltage V 180 Vdc CBO AH M CASE 631AA EmitterBase Voltage V 6.0 Vdc 2 EBO STYLE 1 1 Collector Current Continuous I 60 mAdc C AH = Specific Device Code THERMAL CHARACTERISTICS M = Date Code Characteristic Symbol Max Unit Total Device Dissipation P mW D 265 FR5 Board (Note 1) mW/C T = 25C A ORDERING INFORMATION 2.1 Derate above 25C Device Package Shipping Thermal Resistance, R 470 C/W JA JunctiontoAmbient (Note 1) MMBT5551M3T5G SOT723 8000 / Tape & (PbFree) Reel Total Device Dissipation P 640 mW D Alumina Substrate, (Note 2) T = 25C A NSVMMBT5551M3T5G SOT723 8000 / Tape & 5.1 mW/C Derate above 25C (PbFree) Reel Thermal Resistance, JunctiontoAmbient R 195 C/W JA For information on tape and reel specifications, (Note 2) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Junction and Storage Temperature T , T 55 to C J stg Brochure, BRD8011/D. +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: December, 2015 Rev. 3 MMBT5551M3/DMMBT5551M3 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 160 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 180 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 6.0 E C Collector Cutoff Current I CBO (V = 120 Vdc, I = 0) 100 nAdc CB E (V = 120 Vdc, I = 0, T = 100C) 100 Adc CB E A Emitter Cutoff Current I nAdc EBO (V = 4.0 Vdc, I = 0) 50 EB C ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mAdc, V = 5.0 Vdc) 80 C CE (I = 10 mAdc, V = 5.0 Vdc) 80 250 C CE (I = 50 mAdc, V = 5.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) 0.15 C B (I = 50 mAdc, I = 5.0 mAdc) 0.20 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) 1.0 C B (I = 50 mAdc, I = 5.0 mAdc) 1.0 C B Collector Emitter Cutoff I nA CES (V = 10 V) 50 CB (V = 75 V) 100 CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%. www.onsemi.com 2