X-On Electronics has gained recognition as a prominent supplier of MMBT8099LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MMBT8099LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MMBT8099LT1G ON Semiconductor

MMBT8099LT1G electronic component of ON Semiconductor
MMBT8099LT1G ON Semiconductor
MMBT8099LT1G Bipolar Transistors - BJT
MMBT8099LT1G  Semiconductors

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See Product Specifications
Part No. MMBT8099LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT 500mA 80V NPN
Datasheet: MMBT8099LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
9000: USD 0.0364 ea
Line Total: USD 327.6 
Availability - 17460
Ship by Thu. 19 Jun to Wed. 25 Jun
MOQ: 9000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
1561
Ship by Thu. 26 Jun to Tue. 01 Jul
MOQ : 5
Multiples : 5
5 : USD 0.1366
50 : USD 0.1078
150 : USD 0.0932
500 : USD 0.0556
3000 : USD 0.0497
6000 : USD 0.0467

17460
Ship by Thu. 19 Jun to Wed. 25 Jun
MOQ : 9000
Multiples : 3000
9000 : USD 0.0364
9000 : USD 0.0355

37830
Ship by Thu. 19 Jun to Wed. 25 Jun
MOQ : 6000
Multiples : 3000
6000 : USD 0.045
6000 : USD 0.0444
12000 : USD 0.0413
27000 : USD 0.0405
51000 : USD 0.0396

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MMBT8099LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MMBT8099LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MMBT8099LT1G Amplifier Transistor NPN Silicon Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage V 80 Vdc CEO 2 Collector-Base Voltage V 80 Vdc CBO EMITTER Emitter-Base Voltage V 6.0 Vdc EBO Collector Current Continuous I 500 mAdc C 3 THERMAL CHARACTERISTICS 1 Characteristic Symbol Max Unit 2 Total Device Dissipation FR5 Board P D (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C SOT23 (TO236) CASE 318 Thermal Resistance, Junction-to-Ambient R 556 C/W JA STYLE 6 (Note 1) Total Device Dissipation Alumina P D Substrate (Note 2) T = 25C 300 mW A MARKING DIAGRAM Derate above 25C 2.4 mW/C Thermal Resistance, Junction-to-Ambient R 417 C/W JA (Note 2) KB M Junction and Storage Temperature Range T , T 55 to +150 C J stg 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be KB = Specific Device Code assumed, damage may occur and reliability may be affected. M = Date Code* 1. FR5 = 1.0 X 0.75 X 0.062 in. = PbFree Package 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT8099LT1G SOT23 3000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2001 1 Publication Order Number: October, 2016 Rev. 3 MMBT8099LT1/DMMBT8099LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 3) V Vdc (BR)CEO (I = 10 mAdc, I = 0) 80 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 80 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 6.0 E C Collector Cutoff Current I Adc CES (V = 60 Vdc, I = 0) 0.1 CE B Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) 0.1 CB E (V = 80 Vdc, I = 0) CB E Emitter Cutoff Current I Adc EBO (V = 6.0 Vdc, I = 0) 0.1 EB C (V = 4.0 Vdc, I = 0) EB C ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 1.0 mAdc, V = 5.0 Vdc) 100 300 C CE (I = 10 mAdc, V = 5.0 Vdc) 100 C CE (I = 100 mAdc, V = 5.0 Vdc) 75 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 100 mAdc, I = 5.0 mAdc) 0.4 C B (I = 100 mAdc, I = 10 mAdc) 0.3 C B BaseEmitter On Voltage V Vdc BE(on) (I = 1.0 mAdc, V = 5.0 Vdc) C CE (I = 10 mAdc, V = 5.0 Vdc) 0.6 0.8 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz) 150 C CE Output Capacitance C pF obo (V = 5.0 Vdc, I = 0, f = 1.0 MHz) 6.0 CB E Input Capacitance C pF ibo (V = 0.5 Vdc, I = 0, f = 1.0 MHz) 25 EB C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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