MPS5179 Preferred Device High Frequency Transistor NPN Silicon Features PbFree Packages are Available* MPS5179 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V 12 Vdc CEO(sus) (I = 3.0 mAdc, I = 0) C B CollectorBase Breakdown Voltage V 20 Vdc (BR)CBO (I = 0.001 mAdc, I = 0) C E EmitterBase Breakdown Voltage V 2.5 Vdc (BR)EBO (I = 0.01 mAdc, I = 0) E C Collector Cutoff Current I Adc CBO (V = 15 Vdc, I = 0) 0.02 CB E (V = 15 Vdc, I = 0, T = 150C) 1.0 CB E A ON CHARACTERISTICS DC Current Gain h 25 250 FE (I = 3.0 mAdc, V = 1.0 Vdc) C CE CollectorEmitter Saturation Voltage V 0.4 Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) C B BaseEmitter Saturation Voltage V 1.0 Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) C B SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 1) f 900 2000 MHz T (I = 5.0 mAdc, V = 6.0 Vdc, f = 100 MHz) C CE CollectorBase Capacitance C 1.0 pF cb (V = 10 Vdc, I = 0, f = 0.1 to 1.0 MHz) CB E Small Signal Current Gain h 25 300 fe (I = 2.0 mAdc, V = 6.0 Vdc, f = 1.0 kHz) C CE 1. f is defined as the frequency at which h extrapolates to unity. T fe