MPSA42, MPSA43 High Voltage Transistors NPN Silicon Features MPSA42, MPSA43 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 1) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MPSA42 300 C B MPSA43 200 Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) MPSA42 300 C E MPSA43 200 Emitter Base Breakdown Voltage V 6.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E C Collector Cutoff Current I Adc CBO (V = 200 Vdc, I = 0) MPSA42 0.1 CB E (V = 160 Vdc, I = 0) MPSA43 0.1 CB E Emitter Cutoff Current I Adc EBO (V = 6.0 Vdc, I = 0) MPSA42 0.1 EB C (V = 4.0 Vdc, I = 0) MPSA43 0.1 EB C ON CHARACTERISTICS (Note 1) DC Current Gain h FE (I = 1.0 mAdc, V = 10 Vdc) 25 C CE (I = 10 mAdc, V = 10 Vdc) 40 C CE (I = 30 mAdc, V = 10 Vdc) 40 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 20 mAdc, I = 2.0 mAdc) MPSA42 0.5 C B MPSA43 0.4 BaseEmitter Saturation Voltage V 0.9 Vdc BE(sat) (I = 20 mAdc, I = 2.0 mAdc) C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f 50 MHz T (I = 10 mAdc, V = 20 Vdc, f = 100 MHz) C CE CollectorBase Capacitance C pF cb (V = 20 Vdc, I = 0, f = 1.0 MHz) MPSA42 3.0 CB E MPSA43 4.0 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.