X-On Electronics has gained recognition as a prominent supplier of MPSA55RLRAG Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. MPSA55RLRAG Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

MPSA55RLRAG ON Semiconductor

MPSA55RLRAG electronic component of ON Semiconductor
MPSA55RLRAG ON Semiconductor
MPSA55RLRAG Bipolar Transistors - BJT
MPSA55RLRAG  Semiconductors

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See Product Specifications
Part No. MPSA55RLRAG
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 100mA 60V PNP
Datasheet: MPSA55RLRAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.1563 ea
Line Total: USD 312.6 
Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0
Ship by Fri. 23 May to Thu. 29 May
MOQ : 2000
Multiples : 2000
2000 : USD 0.1563

0
Ship by Fri. 23 May to Thu. 29 May
MOQ : 1
Multiples : 1
1 : USD 0.0423
10 : USD 0.0421
100 : USD 0.0392

0
Ship by Fri. 23 May to Thu. 29 May
MOQ : 2000
Multiples : 2000
2000 : USD 0.0994

0
Ship by Fri. 23 May to Thu. 29 May
MOQ : 892
Multiples : 892
892 : USD 0.2801

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MPSA55RLRAG from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MPSA55RLRAG and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NPN MPSA05, MPSA06* PNP MPSA55, MPSA56* *Preferred Devices Amplifier Transistors Voltage and Current are Negative for PNP Transistors NPN MPSA05, MPSA06* PNP MPSA55, MPSA56* ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) MPSA05, MPSA55 60 C B MPSA06, MPSA56 80 EmitterBase Breakdown Voltage V 4.0 Vdc (BR)EBO (I = 100 Adc, I = 0) E C Collector Cutoff Current I 0.1 Adc CES (V = 60 Vdc, I = 0) CE B Collector Cutoff Current I Adc CBO (V = 60 Vdc, I = 0) MPSA05, MPSA55 0.1 CB E (V = 80 Vdc, I = 0) MPSA06, MPSA56 0.1 CB E ON CHARACTERISTICS DC Current Gain h FE (I = 10 mAdc, V = 1.0 Vdc) 100 C CE (I = 100 mAdc, V = 1.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V 0.25 Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) C B BaseEmitter On Voltage V 1.2 Vdc BE(on) (I = 100 mAdc, V = 1.0 Vdc) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (Note 3) f MHz T (I = 10 mA, V = 2.0 V, f = 100 MHz) MPSA05 100 C CE MPSA06 (I = 100 mAdc, V = 1.0 Vdc, f = 100 MHz) MPSA55 50 C CE MPSA56 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. f is defined as the frequency at which h extrapolates to unity. T fe TURNON TIME TURNOFF TIME V +V V CC CC 1.0 V BB +40 V +40 V 5.0 s 100 R 100 R L L +10 V OUTPUT OUTPUT V R V R in B in B 0 t = 3.0 ns * C 6.0 pF * C 6.0 pF r S S 5.0 F 5.0 F 100 100 5.0 s t = 3.0 ns r *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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