MSB92WT1G, MSB92AWT1G PNPSiliconGeneral PurposeHighVoltage Transistor MSB92WT1G,MSB92AWT1G ELECTRICALCHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage V --300 -- Vdc (BR)CEO (I =--1.0mAdc,I =0) C B Collector-Base Breakdown Voltage V --300 -- Vdc (BR)CBO (I = --100 mAdc, I =0) C E Emitter-Base Breakdown Voltage V --5.0 -- Vdc (BR)EBO (I = --100 mAdc, I =0) E E Collector-Base Cutoff Current I -- --0.25 mA CBO (V = --200 Vdc, I =0) CB E Emitter--Base Cutoff Current I -- --0.1 mA EBO (V =--3.0Vdc,I =0) EB B DC Current Gain (Note 2) -- MSB92WT1: (V =--10Vdc,I =--1.0mAdc) h 25 -- CE C FE1 MSB92AWT1: (V =--10Vdc,I =--1.0mAdc) h 120 200 CE C FE1 (V =--10Vdc,I =--10mAdc) h 40 -- CE C FE2 (V =--10Vdc,I =--30mAdc) h 25 -- CE C FE3 Collector-Emitter Saturation Voltage (Note 2) V -- --0.5 Vdc CE(sat) (I =--20mAdc,I =--2.0mAdc) C B Base--Emitter Saturation Voltage V -- --0.9 Vdc BE(sat) (I =--20mAdc,I =--2.0mAdc) C B SMALLSIGNALCHARACTERISTICS Current--Gain -- Bandwidth Product f 50 -- MHz T (I =--10mAdc,V = --20 Vdc, f = 20 MHz) C CE Collector--Base Capacitance C -- 6.0 pF cb (V =--20Vdc,I =0,f=1.0MHz) CB E 2. Pulse Test: Pulse Width 300 ms, D.C. 2%.