MSC2712GT1G, MSC2712YT1G General Purpose Amplifier Transistor NPN Surface Mount www.onsemi.com Features SC59 CASE 318D Moisture Sensitivity Level: 1 STYLE 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAMS 12G M 12Y M MAXIMUM RATINGS (T = 25C) A Rating Symbol Value Unit CollectorBase Voltage V 60 Vdc (BR)CBO 12M, 12Y = Specific Device Code CollectorEmitter Voltage V 50 Vdc M = Date Code (BR)CEO = PbFree Package EmitterBase Voltage V 7.0 Vdc (BR)EBO (Note: Microdot may be in either location) Collector Current Continuous I 100 mAdc C Collector Current Peak I 200 mAdc C(P) COLLECTOR THERMAL CHARACTERISTICS 3 Characteristic Symbol Max Unit Power Dissipation P 200 mW D Junction Temperature T 150 C J Storage Temperature T 55 to +150 C stg 1 2 Stresses exceeding those listed in the Maximum Ratings table may damage the BASE EMITTER device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping MSC2712GT1G SC59 3000 / Tape & Reel (PbFree) MSC2712YT1G SC59 3000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: February, 2015 Rev. 7 MSC2712GT1/DMSC2712GT1G, MSC2712YT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit CollectorEmitter Breakdown Voltage V 50 Vdc (BR)CEO (I = 2.0 mAdc, I = 0) C B CollectorBase Breakdown Voltage V 60 Vdc (BR)CBO (I = 10 Adc, I = 0) C E EmitterBase Breakdown Voltage V 7.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C CollectorBase Cutoff Current I 0.1 Adc CBO (V = 45 Vdc, I = 0) CB E CollectorEmitter Cutoff Current I CEO (V = 10 Vdc, I = 0) 0.1 Adc CE B (V = 30 Vdc, I = 0) 2.0 Adc CE B (V = 30 Vdc, I = 0, T = 80C) 1.0 mAdc CE B A DC Current Gain (Note 1) h FE (V = 6.0 Vdc, I = 2.0 mAdc) CE C MSC2712GT1G 200 400 MSC2712YT1G 120 240 CollectorEmitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) C B CurrentGain Bandwidth Product f MHz T (I = 1 mA, V = 10.0 V, f = 10 MHz) 50 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, D.C. 2%. www.onsemi.com 2