MSD602-RT1G General Purpose NPN Amplifier Transistor Features MSD602RT1G ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Max Unit CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 10 mA, I = 0) 50 C B CollectorBase Breakdown Voltage V V (BR)CBO (I = 10 A, I = 0) 60 C E EmitterBase Breakdown Voltage V V (BR)EBO (I = 10 A, I = 0) 7.0 E C CollectorBase Cutoff Current I A CBO (V = 20 V, I = 0) 0.1 CB E DC Current Gain (Note 1) (V = 10 V, I = 150 mA) h 120 240 CE C FE1 (V = 10 V, I = 500 mA) h 40 CE C FE2 CollectorEmitter Saturation Voltage V V CE(sat) (I = 300 mA, I = 30 mA) 0.6 C B BaseEmitter On Voltage V V BE(on) (I = 300 mA, V = 5 V) 1.0 C CE BaseEmitter Saturation Voltage V V BE(sat) (I = 300 mA, I = 30 mA) 1.0 C B Output Capacitance C pF ob (V = 10 V, I = 0, f = 1.0 MHz) 15 CB E Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, D.C. 2%.