NSS30100LT1G 30 V, 2 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) are designed for use in low voltage, high speed switching applications www.onsemi.com where affordable efficient energy control is important. Typical application are DCDC converters and power management 30 VOLTS in portable and battery powered products such as cellular and cordless 2.0 AMPS phones, PDAs, computers, printers, digital cameras and MP3 players. PNP LOW V TRANSISTOR Other applications are low voltage motor controls in mass storage CE(sat) EQUIVALENT R 200 m products such as disc drives and tape drives. In the automotive DS(on) industry they can be used in air bag deployment and in the instrument 2 cluster. The high current gain allows e PowerEdge devices to be COLLECTOR 3 driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. 1 NSV Prefix for Automotive and Other Applications Requiring BASE Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS EMITTER Compliant MAXIMUM RATINGS (T = 25C) A 3 Rating Symbol Max Unit 1 Collector-Emitter Voltage V 30 Vdc CEO 2 Collector-Base Voltage V 50 Vdc CBO SOT23 (TO236) Emitter-Base Voltage V 5.0 Vdc EBO CASE 318 Collector Current Continuous I 1.0 A C STYLE 6 Collector Current Peak I 2.0 A CM THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) 310 mW D VS4M T = 25C A Derate above 25C 2.5 mW/C 1 Thermal Resistance, R (Note 1) 403 C/W JA VS4 = Specific Device Code Junction to Ambient M = Date Code* Total Device Dissipation P (Note 2) 710 mW D = PbFree Package T = 25C A (Note: Microdot may be in either location) Derate above 25C 5.7 mW/C *Date Code orientation and/or overbar may vary depending upon manufacturing location. Thermal Resistance, R (Note 2) 176 C/W JA Junction to Ambient Total Device Dissipation P 575 mW Dsingle ORDERING INFORMATION (Single Pulse < 10 sec.) (Note 3) Device Package Shipping Junction and Storage T , T 55 to C J stg Temperature Range +150 NSS30100LT1G, SOT23 3000/Tape & Reel NSV30100LT1G (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. including part orientation and tape sizes, please 1. FR4 Minimum Pad. refer to our Tape and Reel Packaging Specification 2. FR4 1.0 X 1.0 inch Pad. Brochure, BRD8011/D. 3. Refer to Figure 8. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: October, 2016 Rev. 4 NSS30100L/DNSS30100LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 30 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) 50 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 0.1 mAdc, I = 0) 5.0 E C Collector Cutoff Current I Adc CBO (V = 30 Vdc, I = 0) 0.1 CB E CollectorEmitter Cutoff Current I Adc CES (V = 30 Vdc) 0.1 CES Emitter Cutoff Current I Adc EBO (V = 4.0 Vdc) 0.1 EB ON CHARACTERISTICS DC Current Gain (Note 4) (Figure 1) h FE (I = 1.0 mA, V = 2.0 V) 100 C CE (I = 500 mA, V = 2.0 V) 100 300 C CE (I = 1.0 A, V = 2.0 V) 80 C CE (I = 2.0 A, V = 2.0 V) 40 C CE CollectorEmitter Saturation Voltage (Note 4) (Figure 3) V V CE(sat) (I = 0.5 A, I = 0.05 A) 0.25 C B (I = 1.0 A, I = 0.1 A) 0.30 C B (I = 2.0 A, I = 0.2 A) 0.65 C B BaseEmitter Saturation Voltage (Note 4) (Figure 2) V V BE(sat) (I = 1.0 A, I = 0.1 A) 1.2 C B BaseEmitter Turnon Voltage (Note 4) V V BE(on) (I = 1.0 A, V = 2.0 V) 1.1 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 100 C CE Output Capacitance (f = 1.0 MHz) Cobo 15 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. www.onsemi.com 2