NST3946DXV6 Complementary General Purpose Transistor The NST3946DXV6T1 device is a spin-off of our popular SOT23/SOT323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT563 NST3946DXV6 Table 2. THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T = 25C P 357 mW A D (Note 1) Derate above 25C 2.9 mW/C (Note 1) Thermal Resistance R 350 C/W JA Junction-to-Ambient (Note 1) Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation T = 25C P 500 mW A D (Note 1) Derate above 25C 4.0 mW/C (Note 1) Thermal Resistance Junction-to-Ambient R 250 C/W JA (Note 1) Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Note 2) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) (NPN) 40 C B (I = 1.0 mAdc, I = 0) (PNP) 40 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) (NPN) 60 C E (I = 10 Adc, I = 0) (PNP) 40 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO 6.0 (I = 10 Adc, I = 0) (NPN) E C 5.0 (I = 10 Adc, I = 0) (PNP) E C Base Cutoff Current I nAdc BL (V = 30 Vdc, V = 3.0 Vdc) (NPN) 50 CE EB (V = 30 Vdc, V = 3.0 Vdc) (PNP) 50 CE EB Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) (NPN) 50 CE EB (V = 30 Vdc, V = 3.0 Vdc) (PNP) 50 CE EB ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) (NPN) 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE (I = 0.1 mAdc, V = 1.0 Vdc) (PNP) 60 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 80 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) (NPN) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B (I = 10 mAdc, I = 1.0 mAdc) (PNP) 0.25 C B (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) (NPN) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B (I = 10 mAdc, I = 1.0 mAdc) (PNP) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B