NST45011MW6T1G, NSVT45011MW6T3G Dual Matched General Purpose Transistor NPN Matched Pair NST45011MW6T1G, NSVT45011MW6T3G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, (I = 10 mA) V 45 V C (BR)CEO Collector Emitter Breakdown Voltage, (I = 10 A, V = 0) V 50 V C EB (BR)CES Collector Base Breakdown Voltage, (I = 10 A) V 50 V C (BR)CBO Emitter Base Breakdown Voltage, (I = 1.0 A) V 6.0 V E (BR)EBO Collector Cutoff Current I CBO (V = 30 V) 15 nA CB (V = 30 V, T = 150C) 5.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 150 C CE (I = 2.0 mA, V = 5.0 V) 200 300 500 C CE (I = 2.0 mA, V = 5.0 V) (Note 2) h h 0.9 1.0 1.1 C CE FE(1)/ FE(2) Collector Emitter Saturation Voltage V mV CE(sat) (I = 10 mA, I = 0.5 mA) 250 C B (I = 100 mA, I = 5.0 mA) 600 C B Base Emitter Saturation Voltage V mV BE(sat) (I = 10 mA, I = 0.5 mA) 700 750 800 C B (I = 100 mA, I = 5.0 mA) 850 890 950 C B Base Emitter On Voltage V mV BE(on) (I = 2.0 mA, V = 5.0 V) 580 660 700 C CE (I = 10 mA, V = 5.0 V) 770 C CE (I = 2.0 mA, V = 5.0 V) (Note 3) V V 1.0 2.0 C CE BE(1) BE(2) SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product, (I = 10 mA, V = 5 Vdc, f = 100 MHz) f 100 MHz C CE T Output Capacitance, (V = 10 V, f = 1.0 MHz) C 4.5 pF CB ob Noise Figure, (I = 0.2 mA, V = 5 Vdc, R = 2 k , f = 1 kHz, BW = 200Hz) NF 10 dB C CE S Noise Figure, (I = 0.1 mA, V = 10 Vdc, R = 1 k , f = 1 kHz, BW = 200Hz) NF 1.0 dB C CE S 2. h /h is the ratio of one transistor compared to the other transistor within the same package. The smaller h is used as numerator. FE(1) FE(2) FE 3. V V is the absolute difference of one transistor compared to the other transistor within the same package. BE(1) BE(2)