NSV12100XV6T1G ON Semiconductor

NSS12100XV6T1G Low V Transistor, PNP, CE(sat) 12 V, 1.0 A, SOT-563 Package 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low NSS12100XV6T1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) 500 mW D T = 25 C A Derate above 25 C 4.0 mW/ C Thermal Resistance, R (Note 1) 250 C/W JA Junction toAmbient Total Device Dissipation P (Note 2) 650 mW D T = 25 C A Derate above 25 C 5.2 mW/ C Thermal Resistance, R (Note 2) 192 C/W JA Junction toAmbient Thermal Resistance, R 105 C/W JL JunctiontoLead 6 Total Device Dissipation P Single 1.0 W D (Single Pulse < 10 sec.) Junction and Storage T , T 55 to +150 C J stg Temperature Range ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, (I = 10 mAdc, I = 0) V 12 Vdc C B (BR)CEO Collector Base Breakdown Voltage, (I = 0.1 mAdc, I = 0) V 12 Vdc C E (BR)CBO Emitter Base Breakdown Voltage, (I = 0.1 mAdc, I = 0) V 5.0 Vdc E C (BR)EBO Collector Cutoff Current, (V = 12 Vdc, I = 0) I 0.02 0.1 Adc CB E CBO Emitter Cutoff Current, (V = 5.0 Vdc, I = 0) I 0.03 0.1 Adc CES E EBO ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 10 mA, V = 2.0 V) 200 C CE (I = 500 mA, V = 2.0 V) 100 C CE (I = 1.0 A, V = 2.0 V) 90 C CE Collector Emitter Saturation Voltage (Note 3) V V CE(sat) (I = 0.05 A, I = 0.005 A) (Note 4) 0.030 0.040 C B (I = 0.1 A, I = 0.002 A) 0.080 0.100 C B (I = 0.1 A, I = 0.010 A) 0.050 0.060 C B (I = 0.5 A, I = 0.050 A) 0.200 0.225 C B (I = 1.0 A, I = 0.100 A) 0.400 0.440 C B Base Emitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 0.01 A) 0.95 1.15 C B Base Emitter Turnon Voltage (Note 3) V V BE(on) (I = 2.0 A, V = 3.0 V) 1.05 1.15 C CE Input Capacitance (V = 0.5 V, f = 1.0 MHz) Cibo 50 pF EB Output Capacitance (V = 3.0 V, f = 1.0 MHz) Cobo 20 pF CB 2 1. FR4 100 mm , 1 oz copper traces. 2 2. FR4 500 mm , 1 oz copper traces. 3. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2%. 4. Guaranteed by design but not tested.