NSV60601MZ4T3G ON Semiconductor

NSV60601MZ4T3G electronic component of ON Semiconductor
NSV60601MZ4T3G ON Semiconductor
NSV60601MZ4T3G Bipolar Transistors - BJT
NSV60601MZ4T3G Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NSV60601MZ4T3G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSV60601MZ4T3G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. NSV60601MZ4T3G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN 60V6A LOW VCE(SAT)
Datasheet: NSV60601MZ4T3G Datasheet (PDF)
Price (USD)
1403: USD 0.1913 ea
Line Total: USD 268.39 
Availability : 2004
  
Ship by Tue. 23 Sep to Mon. 29 Sep
QtyUnit Price
1403$ 0.1913
1425$ 0.1883
1449$ 0.1852
1473$ 0.1821
1498$ 0.1792

 NSV60601MZ4T3G More Buying Options & Price Grid(s)
Availability 2004
Ship by Tue. 23 Sep to Mon. 29 Sep
MOQ : 1359
Multiples : 1
QtyUnit Price
1359$ 0.1974
1381$ 0.1943
1403$ 0.1913
1425$ 0.1883
1449$ 0.1852
1473$ 0.1821
1498$ 0.1792

Availability 602
Ship by Tue. 30 Sep to Fri. 03 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.8079
10$ 0.7194
30$ 0.6795
100$ 0.4259
500$ 0.395
1000$ 0.3854

Availability 4449
Ship by Fri. 19 Sep to Tue. 23 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6861
10$ 0.4694
100$ 0.3286
500$ 0.2723
1000$ 0.2542
2000$ 0.244
4000$ 0.2349
8000$ 0.2247

Availability 2004
Ship by Tue. 23 Sep to Mon. 29 Sep
MOQ : 1403
Multiples : 1
QtyUnit Price
1403$ 0.1913
1425$ 0.1883
1449$ 0.1852
1473$ 0.1821
1498$ 0.1792

Availability 38800
Ship by Tue. 23 Sep to Mon. 29 Sep
MOQ : 1346
Multiples : 1
QtyUnit Price
1346$ 0.3596
10000$ 0.3205
100000$ 0.2686

Availability 65960
Ship by Tue. 23 Sep to Mon. 29 Sep
MOQ : 4000
Multiples : 4000
QtyUnit Price
4000$ 0.2574

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Factory Pack Quantity :
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSV60601MZ4T3G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSV60601MZ4T3G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NSS60601MZ4 Low V Transistor, CE(sat) NPN, 60 V, 6.0 A 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These are designed CE(sat) NSS60601MZ4 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) D T = 25C 800 mW A Derate above 25C 6.5 mW/C Thermal Resistance, R (Note 1) 155 C/W JA Junction toAmbient Total Device Dissipation P (Note 2) D T = 25C 2 W A Derate above 25C 15.6 mW/C Thermal Resistance, R (Note 2) C/W JA Junction toAmbient 64 Total Device Dissipation P mW Dsingle (Single Pulse < 10 sec.) (Note 3) 710 Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 7.6 mm , 1 oz. copper traces. 2 2. FR4 645 mm , 1 oz. copper traces. 3. Thermal response. ORDERING INFORMATION Device Package Shipping NSS60601MZ4T1G SOT223 1,000 / Tape & Reel (Pb Free) NSV60601MZ4T1G* SOT223 1,000 / Tape & Reel (Pb Free) NSS60601MZ4T3G SOT223 4,000 / Tape & Reel (Pb Free) NSV60601MZ4T3G* SOT223 4,000 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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