X-On Electronics has gained recognition as a prominent supplier of NSVBC856BM3T5G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSVBC856BM3T5G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSVBC856BM3T5G ON Semiconductor

NSVBC856BM3T5G electronic component of ON Semiconductor
NSVBC856BM3T5G ON Semiconductor
NSVBC856BM3T5G Bipolar Transistors - BJT
NSVBC856BM3T5G  Semiconductors

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See Product Specifications
Part No. NSVBC856BM3T5G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT
Datasheet: NSVBC856BM3T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
8000: USD 0.0418 ea
Line Total: USD 334.4 
Availability - 15520
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
15520
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 8000
Multiples : 8000
8000 : USD 0.0418

101
Ship by Tue. 24 Jun to Fri. 27 Jun
MOQ : 5
Multiples : 5
5 : USD 0.1832
50 : USD 0.148
150 : USD 0.1306
500 : USD 0.0793
2500 : USD 0.0721
5000 : USD 0.0686

7760
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 7752
Multiples : 1
7752 : USD 0.0605
10000 : USD 0.0539
100000 : USD 0.0451

77600
Ship by Tue. 17 Jun to Mon. 23 Jun
MOQ : 8000
Multiples : 8000
8000 : USD 0.045

   
Manufacturer
Product Category
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Dc Current Gain Hfe Max
Brand
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSVBC856BM3T5G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVBC856BM3T5G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC856BM3, NSVBC856BM3 General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT723 which is designed for low power surface mount applications. BC856BM3, NSVBC856BM3 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V V (BR)CEO (I = 10 mA) 65 C Collector Emitter Breakdown Voltage V V (BR)CES (I = 10 A, V = 0) 80 C EB Collector Base Breakdown Voltage V V (BR)CBO (I = 10 A) 80 C Emitter Base Breakdown Voltage V V (BR)EBO (I = 1.0 A) 5.0 E Collector Cutoff Current (V = 30 V) I 15 nA CB CBO (V = 30 V, T = 150C) 4.0 A CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 150 C CE (I = 2.0 mA, V = 5.0 V) 220 290 475 C CE Collector Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.3 V C B CE(sat) Collector Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.65 C B Base Emitter Saturation Voltage (I = 10 mA, I = 0.5 mA) V 0.7 V C B BE(sat) Base Emitter Saturation Voltage (I = 100 mA, I = 5.0 mA) 0.9 C B Base Emitter Voltage (I = 2.0 mA, V = 5.0 V) V 0.6 0.75 mV C CE BE(on) Base Emitter Voltage (I = 10 mA, V = 5.0 V) 0.82 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) 100 C CE Output Capacitance C pF obo (V = 10 V, f = 1.0 MHz) 4.5 CB Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) 10 C CE S

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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