X-On Electronics has gained recognition as a prominent supplier of NSVBC858CLT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSVBC858CLT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSVBC858CLT1G ON Semiconductor

NSVBC858CLT1G electronic component of ON Semiconductor
NSVBC858CLT1G ON Semiconductor
NSVBC858CLT1G Bipolar Transistors - BJT
NSVBC858CLT1G  Semiconductors

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See Product Specifications
Part No. NSVBC858CLT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT
Datasheet: NSVBC858CLT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
13275: USD 0.0354 ea
Line Total: USD 469.94 
Availability - 14550
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ: 13275  Multiples: 1
Pack Size: 1
Availability Price Quantity
2788
Ship by Wed. 25 Jun to Mon. 30 Jun
MOQ : 5
Multiples : 5
5 : USD 0.1096
50 : USD 0.0888
150 : USD 0.0784
500 : USD 0.0529
3000 : USD 0.0435
6000 : USD 0.0413

14550
Ship by Wed. 18 Jun to Tue. 24 Jun
MOQ : 13275
Multiples : 1
13275 : USD 0.0354

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSVBC858CLT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVBC858CLT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC856ALT1G Series General Purpose Transistors PNP Silicon Features www.onsemi.com S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable COLLECTOR 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS (T = 25C unless otherwise noted) A 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage V V CEO BC856, SBC856 65 BC857, SBC857 45 3 BC858, NSVBC858, BC859 30 Collector-Base Voltage V V CBO 1 BC856, SBC856 80 BC857, SBC857 50 2 BC858, NSVBC858, BC859 30 SOT23 (TO236) EmitterBase Voltage V 5.0 V CASE 318 EBO STYLE 6 Collector Current Continuous I 100 mAdc C Collector Current Peak I 200 mAdc C THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, P D xx M (Note 1) T = 25C 225 mW A Derate above 25C 1.8 mW/C 1 Thermal Resistance, R 556 C/W JA JunctiontoAmbient xx = Device Code Total Device Dissipation Alumina P D xx = (Refer to page 6) Substrate, (Note 2) T = 25C 300 mW A M = Date Code* Derate above 25C 2.4 mW/C = PbFree Package (Note: Microdot may be in either location) Thermal Resistance, R 417 C/W JA JunctiontoAmbient *Date Code orientation and/or overbar may vary depending upon manufacturing location. Junction and Storage Temperature T , T 55 to +150 C J stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information in the package 1. FR5 = 1.0 x 0.75 x 0.062 in. dimensions section on page 6 of this data sheet. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 15 BC856ALT1/DBC856ALT1G Series ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage BC856, SBC856 Series V 65 V (BR)CEO (I = 10 mA) BC857, SBC857 Series 45 C BC858, NSBVC858 BC859 Series 30 CollectorEmitter Breakdown Voltage BC856 S, SBC856eries V 80 V (BR)CES 50 (I = 10 A, V = 0) BC857A, SBC857A, BC857B, SBC857B Only C EB 30 BC858, NSVB858, BC859 Series CollectorBase Breakdown Voltage BC856, SBC856 Series V 80 V (BR)CBO (I = 10 A) BC857, SBC857 Series 50 C BC858, NSVBC858, BC859 Series 30 EmitterBase Breakdown Voltage BC856, SBC856 Series V 5.0 V (BR)EBO 5.0 (I = 1.0 A) BC857, SBC857 Series E 5.0 BC858, NSVBC858, BC859 Series Collector Cutoff Current (V = 30 V) I 15 nA CB CBO Collector Cutoff Current (V = 30 V, T = 150C) 4.0 A CB A ON CHARACTERISTICS DC Current Gain BC856A, SBC856A, BC857A, SBC857A, BC858A h 90 FE 150 (I = 10 A, V = 5.0 V) BC856B, SBC856B, BC857B, SBC857B, C CE BC858B, NSVBC858B BC857C, SBC857C BC858C 270 (I = 2.0 mA, V = 5.0 V) BC856A, SBC856A, BC857A, 125 180 250 C CE SBC857A, BC858A BC856B, SBC856B, BC857B, SBC857B, BC858B, 220 290 475 NSVBC858B, BC859B BC857C, SBC857C, BC858C, BC859C 420 520 800 CollectorEmitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.3 C B (I = 100 mA, I = 5.0 mA) 0.65 C B BaseEmitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 0.5 mA) 0.7 C B (I = 100 mA, I = 5.0 mA) 0.9 C B BaseEmitter On Voltage V V BE(on) (I = 2.0 mA, V = 5.0 V) 0.6 0.75 C CE (I = 10 mA, V = 5.0 V) 0.82 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 100 MHz T (I = 10 mA, V = 5.0 Vdc, f = 100 MHz) C CE Output Capacitance C 4.5 pF ob (V = 10 V, f = 1.0 MHz) CB Noise Figure NF dB (I = 0.2 mA, V = 5.0 Vdc, R = 2.0 k , f = 1.0 kHz, BW = 200 Hz) C CE S BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series 10 BC859 Series 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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