NSVMSD601-RT1G ON Semiconductor

MSD601-RT1, MSD601-ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features MSD601 RT1, MSD601ST1 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Max Unit Collector Emitter Breakdown Voltage V 50 Vdc (BR)CEO (I = 2.0 mAdc, I = 0) C B Collector Base Breakdown Voltage V 60 Vdc (BR)CBO (I = 10 Adc, I = 0) C E Emitter Base Breakdown Voltage V 7.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Base Cutoff Current I 0.1 Adc CBO (V = 45 Vdc, I = 0) CB E Collector Emitter Cutoff Current I 100 nAdc CEO (V = 10 Vdc, I = 0) CE B DC Current Gain (Note 1) (V = 10 Vdc, I = 2.0 mAdc) CE C MSD601 RT1 h 210 340 FE1 MSD601 ST1 290 460 (V = 2.0 Vdc, I = 100 mAdc) h 90 CE C FE2 Collector Emitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) C B 1. Pulse Test: Pulse Width 300 s, D.C. 2%. ORDERING INFORMATION Device Package Shipping MSD 601RT1 SC 59 3000 / Tape & Reel MSD 601RT1G SC 59 3000 / Tape & Reel (Pb Free) MSD 601ST1 SC 59 3000 / Tape & Reel MSD 601ST1G SC 59 3000 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.