NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair NST30010MXV6T1G, NSVT30010MXV6T1G THERMAL CHARACTERISTICS One Device Both Devices Heated Heated Characteristic Parameter Symbol Unit Total Device Dissipation, Two Devices Heated Total Package P D T = 25C (Note 1) 357 500 (250 ea) mW A Derate above 25C (Note 1) 2.9 4.0 mW/C T = 25C (Note 2) 429 661 (331 ea) mW A Derate above 25C (Note 2) 3.4 5.3 mW/C Thermal Resistance One Heated Device R C/W JA Junction-to-Ambient (Note 1) 350 250 Junction-to-Ambient (Note 2) 291 189 Thermal Resistance Unheated Device Heated by C/W JA Junction-to-Ambient (Note 1) Heated Device 149 Junction-to-Ambient (Note 2) 88 Thermal Resistance Lead Attached to Heated Device C/W JL Junction-to-Lead (Note 1) 128 76 Junction-to-Lead (Note 2) 152 85 Thermal Resistance Heated Device Heating Lead C/W JL Junction-to-Lead (Note 1) Attached to Unheated Device 224 Junction-to-Lead (Note 2) 222 Junction and Storage T , T C J stg Temperature Range 55 to +150 1. PCB with 51 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB 76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51. 2. PCB with 250 square millimeter of 2 oz (0.070mm thick) copper heat spreading connected to package leads. Mounted on a FR4 PCB 76x76x1.5mm Single layer traces. Natural convection test according to JEDEC 51. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, (I = 10 mA) V 30 V C (BR)CEO Collector Emitter Breakdown Voltage, (I = 10 A, V = 0) V 30 V C EB (BR)CES Collector Base Breakdown Voltage, (I = 10 A) V 30 V C (BR)CBO Emitter Base Breakdown Voltage, (I = 1.0 A) V 5.0 V E (BR)EBO Collector Cutoff Current (V = 30 V) I 15 nA CB CBO 4.0 A Collector Cutoff Current (V = 30 V, T = 150C) CB A ON CHARACTERISTICS DC Current Gain h FE (I = 10 A, V = 5.0 V) 270 C CE (I = 2.0 mA, V = 5.0 V) 420 520 800 C CE (I = 2.0 mA, V = 5.0 V) (Note 3) h h 0.9 1.0 C CE FE(1)/ FE(2) Collector Emitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) 0.30 C B (I = 100 mA, I = 5.0 mA) 0.60 C B Base Emitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 1.0 mA) 0.75 C B (I = 100 mA, I = 10 mA) 0.90 C B Base Emitter On Voltage V V BE(on) (I = 2.0 mA, V = 5.0 V) 0.60 0.75 C CE (I = 10 mA, V = 5.0 V) 0.82 C CE (I = 2.0 mA, V = 5.0 V) (Note 4) V V 1.0 2.0 mV C CE BE(1) BE(2) SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product, (I = 10 mA, V = 5 Vdc, f = 100 MHz) f 100 MHz C CE T Output Capacitance, (V = 10 V, f = 1.0 MHz) C 4.5 pF CB ob Noise Figure, (I = 0.2 mA, V = 5 Vdc, R = 2 k , f = 1 kHz, BW = 200Hz) NF 10 dB C CE S 3. h /h is the ratio of one transistor compared to the other transistor within the same package. The smaller h is used as numerator. FE(1) FE(2) FE 4. V V is the absolute difference of one transistor compared to the other transistor within the same package. BE(1) BE(2)