PZT2222A
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT223
package which is designed for medium power surface mount
PZT2222A
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (I = 10 mAdc, I = 0) V 40 Vdc
C B (BR)CEO
CollectorBase Breakdown Voltage (I = 10 Adc, I = 0) V 75 Vdc
C E (BR)CBO
EmitterBase Breakdown Voltage (I = 10 Adc, I = 0) V 6.0 Vdc
E C (BR)EBO
BaseEmitter Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) I 20 nAdc
CE BE BEX
CollectorEmitter Cutoff Current (V = 60 Vdc, V = 3.0 Vdc) I 10 nAdc
CE BE CEX
EmitterBase Cutoff Current (V = 3.0 Vdc, I = 0) I 100 nAdc
EB C EBO
CollectorBase Cutoff Current I
CBO
(V = 60 Vdc, I = 0) 10 nAdc
CB E
(V = 60 Vdc, I = 0, T = 125C) 10 Adc
CB E A
ON CHARACTERISTICS
DC Current Gain h
FE
(I = 0.1 mAdc, V = 10 Vdc) 35
C CE
(I = 1.0 mAdc, V = 10 Vdc) 50
C CE
(I = 10 mAdc, V = 10 Vdc) 70
C CE
(I = 10 mAdc, V = 10 Vdc, T = 55C) 35
C CE A
(I = 150 mAdc, V = 10 Vdc) 100 300
C CE
(I = 150 mAdc, V = 1.0 Vdc) 50
C CE
(I = 500 mAdc, V = 10 Vdc) 40
C CE
CollectorEmitter Saturation Voltages V Vdc
CE(sat)
(I = 150 mAdc, I = 15 mAdc) 0.3
C B
(I = 500 mAdc, I = 50 mAdc) 1.0
C B
BaseEmitter Saturation Voltages V Vdc
BE(sat)
(I = 150 mAdc, I = 15 mAdc) 0.6 1.2
C B
(I = 500 mAdc, I = 50 mAdc) 2.0
C B
Input Impedance h k
ie
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 2.0 8.0
CE C
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 0.25 1.25
CE C
Voltage Feedback Ratio h
re
4
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 8.0x10
CE C
4
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 4.0x10
CE C
SmallSignal Current Gain h
fe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 50 300
CE C
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 75 375
CE C
Output Admittance h mhos
oe
(V = 10 Vdc, I = 1.0 mAdc, f = 1.0 kHz) 5.0 35
CE C
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz) 25 200
CE C
Noise Figure (V = 10 Vdc, I = 100 Adc, f = 1.0 kHz) F 4.0 dB
CE C
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product f MHz
T
(I = 20 mAdc, V = 20 Vdc, f = 100 MHz) 300
C CE
Output Capacitance (V = 10 Vdc, I = 0, f = 1.0 MHz) C 8.0 pF
CB E c
Input Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 25 pF
EB C e
SWITCHING TIMES (T = 25C)
A
Delay Time (V = 30 Vdc, I = 150 mAdc, t 10 ns
CC C d
I = 15 mAdc, V = 0.5 Vdc)
B(on) EB(off)
Rise Time t 25
r
Figure 1
Storage Time (V = 30 Vdc, I = 150 mAdc, t 225 ns
CC C s
I = I = 15 mAdc)
B(on) B(off)
Fall Time t 60
f
Figure 2