BF720T1G, SBF720T1G, BF720T3G NPN Silicon Transistor Features BF720T1G, SBF720T1G, BF720T3G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) 300 C B Collector-Base Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 300 C E Collector-Emitter Breakdown Voltage V Vdc (BR)CER (I = 100 Adc, R = 2.7 k ) 300 C BE Emitter-Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C Collector-Base Cutoff Current I nAdc CBO (V = 200 Vdc, I = 0) 10 CB E CollectorEmitter Cutoff Current I CER (V = 250 Vdc, R = 2.7 k ) 50 nAdc CE BE 10 (V = 200 Vdc, R = 2.7 k , T = 150C) Adc CE BE J ON CHARACTERISTICS DC Current Gain h FE (I = 25 mAdc, V = 20 Vdc) 50 C CE Collector-Emitter Saturation Voltage V Vdc CE(sat) (I = 30 mAdc, I = 5.0 mAdc) 0.6 C B DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mAdc, V = 10 Vdc, f = 35 MHz) 60 C CE Feedback Capacitance C pF re (V = 30 Vdc, I = 0, f = 1.0 MHz) 1.6 CE C