X-On Electronics has gained recognition as a prominent supplier of SFT1443-TL-W mosfet across the USA, India, Europe, Australia, and various other global locations. SFT1443-TL-W mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

SFT1443-TL-W

SFT1443-TL-W electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No. SFT1443-TL-W
Manufacturer: ON Semiconductor
Category: MOSFET
Description: ON Semiconductor MOSFET NCH 100V 9A TP-FA(DPAK)
Datasheet: SFT1443-TL-W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 2100
Multiples : 700
2100 : USD 0.2913
21000 : USD 0.2794
210000 : USD 0.2739
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.8144
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 2.6464
10 : USD 0.9738
100 : USD 0.7165
700 : USD 0.5672
1400 : USD 0.4524
2100 : USD 0.4112
4900 : USD 0.3989
N/A

Obsolete
0 - WHS 4

MOQ : 700
Multiples : 700
700 : USD 0.451
N/A

Obsolete
     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Transistor Type
Brand
Configuration
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Ordering number : ENA1896B SFT1443 Power MOSFET SFT1443 Electrical Characteristics at Ta = 25C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 100 V BR DSS D GS Zero-Gate Voltage Drain Current I V =100V, V=0V 1 A DSS DS GS Gate to Source Leakage Current I V =16V, V=0V 10 A GSS GS DS Gate Threshold Voltage V(th) V =10V, I=1mA 1.5 2.6V GS DS D Forward Transconductance g V =10V, I=4.5A 4 S FS DS D R(on)1 I =3A, V=10V 180 225m DS D GS Static Drain to Source On-State Resistance R(on)2 I =1.5A, V=4.5V 195 275m DS D GS R(on)3 I =1.5A, V=4V 205 290m DS D GS Input Capacitance Ciss 490 pF Output Capacitance Coss V =20V, f=1MHz 34 pF DS Reverse Transfer Capacitance Crss 19 pF Turn-ON Delay Time t (on) 8 ns d Rise Time t 10 ns r See specified Test Circuit. Turn-OFF Delay Time t (off) 34 ns d Fall Time t 24 ns f Total Gate Charge Qg 9.8 nC Gate to Source Charge Qgs V =50V, V =10V, I =9A 1.8 nC DS GS D Gate to Drain Miller Charge Qgd 1.6 nC Forward Diode Voltage V I =9A, V=0V 1.03 1.2V SD S GS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit V V =50V DD IN 10V 0V I =4.5A D V IN R =11.1 L D V OUT PW=10s D.C.1% G SFT1443 P.G 50 S No.A1896-2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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