NSS35200MR6T1G 35 V, 5 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low NSS35200MR6T1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) D T = 25C 625 mW A Derate above 25C 5.0 mW/C Thermal Resistance, C/W R (Note 1) JA Junction toAmbient 200 Total Device Dissipation P (Note 2) D T = 25C 1.0 W A Derate above 25C 8.0 mW/C Thermal Resistance, R (Note 2) C/W JA Junction toAmbient 120 Thermal Resistance, R C/W JL JunctiontoLead 1 80 Total Device Dissipation P W Dsingle (Single Pulse < 10 sec.) (Notes 2 & 3) 1.75 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 X 1.0 inch Pad. 3. Refer to Figure 8.