SNSS40600CF8T1G ON Semiconductor

NSS40600CF8T1G, SNSS40600CF8T1G 40 V, 7.0 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V NSS40600CF8T1G, SNSS40600CF8T1G MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage V 40 Vdc CBO Emitter-Base Voltage V 7.0 Vdc EBO Collector Current Continuous I 6.0 Adc C Collector Current Peak I 7.0 A CM Electrostatic Discharge ESD HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation, T = 25C P (Note 1) 830 mW A D Derate above 25C 6.7 mW/C Thermal Resistance, R (Note 1) C/W JA Junction toAmbient 150 Total Device Dissipation, T = 25C P (Note 2) 1.4 W A D Derate above 25C 11.1 mW/C Thermal Resistance, R (Note 2) C/W JA Junction toAmbient 90 Thermal Resistance, R (Note 2) C/W JL JunctiontoLead 1 15 Total Device Dissipation P W Dsingle (Single Pulse < 10 sec) (Notes 2 & 3) 2.75 Junction and Storage Temperature Range T , T 55 to +150 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 1. FR4 100 mm , 1 oz copper traces. 2 2. FR4 500 mm , 1 oz copper traces. 3. Thermal response.